- 您现在的位置：买卖IC网 > PDF目录385639 > MT4C1M16E5DJ-6 (Micron Technology, Inc.) EDO DRAM PDF资料下载
参数资料
| 型号： | MT4C1M16E5DJ-6 |
| 厂商： | Micron Technology, Inc. |
| 英文描述： | EDO DRAM |
| 中文描述： | EDO公司的DRAM |
| 文件页数： | 3/24页 |
| 文件大小： | 385K |
| 代理商： | MT4C1M16E5DJ-6 |
3
1 Meg x 16 EDO DRAM
D52_B.p65 – Rev. B; Pub. 3/01
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2001, Micron Technology, Inc
16Mb: 1 MEG x16
EDO DRAM
V
IL
CASL#/CASH#
V
IL
RAS#
V
IL
ADDR
ROW
COLUMN (A)
DON‘T CARE
UNDEFINED
V
IL
WE#
V
IOL
OPEN
DQ
tWPZ
The DQs go to High-Z if WE# falls, and if
t
WPZ is met,
will remain High-Z until CAS# goes LOW with
WE# HIGH (i.e., until a READ cycle is initiated).
V
IL
OE#
VALID DATA (B)
tWHZ
WE# may be used to disable the DQs to prepare
for input data in an EARLY WRITE cycle. The DQs
will remain High-Z until CAS# goes LOW with
WE# HIGH (i.e., until a READ cycle is initiated).
tWHZ
COLUMN (D)
VALID DATA (A)
COLUMN (B)
COLUMN (C)
INPUT DATA (C)
Figure 2
WE# Control of DQs
PAGE ACCESS
Page operations allow faster data operations (READ,
WRITE or READ-MODIFY-WRITE) within a row-
address-defined page boundary. The page cycle is al-
ways initiated with a row address strobed in by RAS#,
followed by a column address strobed in by CAS#. Ad-
ditional columns may be accessed by providing valid
column addresses, strobing CAS# and holding RAS#
LOW, thus executing faster memory cycles. Returning
RAS# HIGH terminates the page mode of operation,
i.e., closes the page.
EDO PAGE MODE
The 1 Meg x 16 provides EDO PAGE MODE, which is
an accelerated FAST-PAGE-MODE cycle. The primary
advantage of EDO is the availability of data-out even
after CAS# returns HIGH. EDO provides for CAS#
precharge time (
t
CP) to occur without the output data
going invalid. This elimination of CAS# output control
provides for pipelined READs.
FAST-PAGE-MODE DRAMs have traditionally
turned the output buffers off (High-Z) with the rising
edge of CAS#. EDO-PAGE-MODE DRAMs operate like
FAST-PAGE-MODE DRAMs, except data will remain
valid or become valid after CAS# goes HIGH during
READs, provided RAS# and OE# are held LOW. If OE# is
pulsed while RAS# and CAS# are LOW, data will toggle
from valid data to High-Z and back to the same valid
data. If OE# is toggled or pulsed after CAS# goes HIGH
while RAS# remains LOW, data will transition to and
remain High-Z (refer to Figure 1). WE# can also perform
the function of disabling the output drivers under cer-
tain conditions, as shown in Figure 2.
During an application, if the DQ outputs are wire
OR’d, OE# must be used to disable idle banks of DRAMs.
Alternatively, pulsing WE# to the idle banks during
CAS# HIGH time will also High-Z the outputs. Inde-
pendent of OE# control, the outputs will disable after
t
OFF, which is referenced from the rising edge of RAS#
or CAS#, whichever occurs last.
BYTE ACCESS CYCLE
The BYTE WRITEs and BYTE READs are determined
by the use of CASL# and CASH#. Enabling CASL# se-
lects a lower BYTE access (DQ0-DQ7). Enabling CASH#
selects an upper BYTE access (DQ8-DQ15). Enabling
both CASL# and CASH# selects a WORD WRITE cycle.
The 1 Meg x 16 may be viewed as two 1 Meg x 8
DRAMs that have common input controls, with the ex-
ception of the CAS# inputs. Figure 3 illustrates the BYTE
WRITE and WORD WRITE cycles.
Additionally, both bytes must always be of the same
mode of operation if both bytes are active. A CAS#
precharge must be satisfied prior to changing modes of
operation between the upper and lower bytes. For ex-
ample, an EARLY WRITE on one byte and a LATE WRITE
on the other byte are not allowed during the same cycle.
相关PDF资料 |
PDF描述 |
|---|---|
| MT4LC1M16E5DJ-6S | EDO DRAM |
| MT4LC1M16E5 | EDO DRAM |
| MT4C4256 | 256K x 4 DRAM Standard Or Low Power, Extended Refresh(标准或低功率，扩展刷新，256K x 4动态RAM) |
| MT4C4256L | 256K x 4 DRAM Standard Or Low Power, Extended Refresh(标准或低功率，扩展刷新，256K x 4动态RAM) |
| MT4LC16M4T8TG-5 | DRAM |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MT4C1M16E5TG-5 | 制造商:MICRON 制造商全称:Micron Technology 功能描述:EDO DRAM |
| MT4C1M16E5TG-6 | 制造商:MICRON 制造商全称:Micron Technology 功能描述:EDO DRAM |
| MT4C2M8B1DJ-6 | 制造商:Micron Technology Inc 功能描述: |
| MT4C2M8E7DW-6 | 制造商:Micron Technology Inc 功能描述:2M X 8 EDO DRAM, 60 ns, PDSO28 |
| MT4C40004 | 制造商:MICRON 制造商全称:Micron Technology 功能描述:4 MEG x 4 DRAM |
发布紧急采购，3分钟左右您将得到回复。