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参数资料
| 型号： | MT4C1M16E5DJ-6 |
| 厂商： | Micron Technology, Inc. |
| 英文描述： | EDO DRAM |
| 中文描述： | EDO公司的DRAM |
| 文件页数： | 7/24页 |
| 文件大小： | 385K |
| 代理商： | MT4C1M16E5DJ-6 |
7
1 Meg x 16 EDO DRAM
D52_B.p65 – Rev. B; Pub. 3/01
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2001, Micron Technology, Inc
16Mb: 1 MEG x16
EDO DRAM
I
CC
OPERATING CONDITIONS AND MAXIMUM LIMITS
(Notes: 1, 2, 3, 5, 8; notes appear on pages 10-11); (V
CC
[MIN]
￡
V
CC
￡
V
CC
[MAX])
PA RA METER/CONDITION
STANDBY CURRENT: TTL
(RAS# = CAS# = V
IH
)
STANDBY CURRENT: CMOS (non-“S” version only)
(RAS# = CAS# = other inputs = V
DD
- 0.2V)
STANDBY CURRENT: CMOS (“S” version only)
(RAS# = CAS# = other inputs = V
DD
- 0.2V)
OPERATING CURRENT: Random READ/WRITE
Average power supply current
(RAS#, CAS#, address cycling:
t
RC =
t
RC [MIN])
OPERATING CURRENT: EDO PAGE MODE
Average power supply current (RAS# = V
IL
, CAS#,
address cycling:
t
PC =
t
PC [MIN])
REFRESH CURRENT: RAS#-ONLY
Average power supply current
(RAS# cycling, CAS# = V
IH
:
t
RC =
t
RC [MIN])
REFRESH CURRENT: CBR
Average power supply current
(RAS#, CAS#, address cycling:
t
RC =
t
RC [MIN])
REFRESH CURRENT: Extended (“S” version only)
Average power supply current: CAS# = 0.2V or CBR cycling;
RAS# =
t
RAS (MIN); WE# = V
DD
- 0.2V; A0-A10, OE# and
D
IN
= V
DD
- 0.2V or 0.2V (D
IN
may be left open);
t
RC = 125μs
REFRESH CURRENT: Self (“S” version only)
Average power supply current: CBR with RAS#
t
RASS (MIN)
and CAS# held LOW; WE# = V
DD
- 0.2V; A0-A10,
OE# and D
IN
= V
DD
- 0.2V or 0.2V (D
IN
may be left open)
SYMBOL SPEED
I
CC
1
3.3V
1
5V
2
UNITS NOTES
mA
ALL
I
CC
2
ALL
500
500
μA
I
CC
2
ALL
150
150
μA
I
CC
3
-5
-6
180
170
190
180
mA
6
I
CC
4
-5
-6
140
130
150
140
mA
6
I
CC
5
-5
-6
180
170
190
180
mA
I
CC
6
-5
-6
180
170
180
170
mA
7, 9
I
CC
7
ALL
300
300
μA
7, 9
I
CC
8
ALL
300
300
μA
7, 9
相关PDF资料 |
PDF描述 |
|---|---|
| MT4LC1M16E5DJ-6S | EDO DRAM |
| MT4LC1M16E5 | EDO DRAM |
| MT4C4256 | 256K x 4 DRAM Standard Or Low Power, Extended Refresh(标准或低功率，扩展刷新，256K x 4动态RAM) |
| MT4C4256L | 256K x 4 DRAM Standard Or Low Power, Extended Refresh(标准或低功率，扩展刷新，256K x 4动态RAM) |
| MT4LC16M4T8TG-5 | DRAM |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MT4C1M16E5TG-5 | 制造商:MICRON 制造商全称:Micron Technology 功能描述:EDO DRAM |
| MT4C1M16E5TG-6 | 制造商:MICRON 制造商全称:Micron Technology 功能描述:EDO DRAM |
| MT4C2M8B1DJ-6 | 制造商:Micron Technology Inc 功能描述: |
| MT4C2M8E7DW-6 | 制造商:Micron Technology Inc 功能描述:2M X 8 EDO DRAM, 60 ns, PDSO28 |
| MT4C40004 | 制造商:MICRON 制造商全称:Micron Technology 功能描述:4 MEG x 4 DRAM |
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