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参数资料
| 型号： | MT58L512L18FF-7.5IT |
| 元件分类： | SRAM |
| 英文描述： | 512K X 18 CACHE SRAM, 7.5 ns, PBGA165 |
| 封装： | 13 X 15 MM, FBGA-165 |
| 文件页数： | 16/27页 |
| 文件大小： | 417K |
| 代理商： | MT58L512L18FF-7.5IT |
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8Mb: 512K x 18, 256K x 32/36 Flow-Through SyncBurst SRAM
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MT58L512L18F_C.p65 – Rev. 2/02
2002, Micron Technology, Inc.
8Mb: 512K x 18, 256K x 32/36
FLOW-THROUGH SYNCBURST SRAM
WRITE TIMING
NOTE: 1. D(A2) refers to output from address A2. D(A2 + 1) refers to output from the next internal burst address following A2.
2. CE2# and CE2 have timing identical to CE#. On this diagram, when CE# is LOW, CE2# is LOW and CE2 is HIGH. When
CE# is HIGH, CE2# is HIGH and CE2 is LOW.
3. OE# must be HIGH before the input data setup and held HIGH throughout the data hold time. This prevents input/
output data contention for the time period prior to the byte write enable inputs being sampled.
4. ADV# must be HIGH to permit a WRITE to the loaded address.
5. Full-width WRITE can be initiated by GW# LOW; or GW# HIGH and BWE#, BWa# and BWb# LOW for x18 device; or GW#
HIGH and BWE#, BWa#-BWd# LOW for x32 and x36 devices.
tKC
tKL
CLK
ADSP#
tADSH
tADSS
ADDRESS
tKH
OE#
ADSC#
CE#
(NOTE 2)
tAH
tAS
A1
tCEH
tCES
Q
High-Z
ADV#
BURST READ
BURST WRITE
D(A2)
D(A2 + 1)
D(A1)
D(A3)
D(A3 + 1)
D(A3 + 2)
D(A2 + 3)
A2
A3
D
Extended BURST WRITE
D(A2 + 2)
Single WRITE
tADSH
tADSS
tADSH
tADSS
tOEHZ
tAAH
tAAS
tWH
tWS
tDH
tDS
(NOTE 3)
(NOTE 1)
(NOTE 4)
GW#
tWH
tWS
(NOTE 5)
BYTE WRITE signals are
ignored when ADSP# is LOW.
ADSC# extends burst.
ADV# suspends burst.
BWE#,
BWa#-BWd#
DON’T CARE
-7.5
-8.5
-10
SYM
MIN
MAX
MIN
MAX
MIN
MAX
UNITS
tDS
1.5
1.8
2.0
ns
tCES
1.5
1.8
2.0
ns
tAH
0.5
ns
tADSH
0.5
ns
tAAH
0.5
ns
tWH
0.5
ns
tDH
0.5
ns
tCEH
0.5
ns
WRITE TIMING PARAMETERS
-7.5
-8.5
-10
SYM
MIN
MAX
MIN
MAX
MIN
MAX
UNITS
tKC
8.8
10.0
15
ns
fKF
113
100
66
MHz
tKH
2.5
3.0
4.0
ns
tKL
2.5
3.0
4.0
ns
tOEHZ
4.2
5.0
ns
tAS
1.5
1.8
2.0
ns
tADSS
1.5
1.8
2.0
ns
tAAS
1.5
1.8
2.0
ns
tWS
1.5
1.8
2.0
ns
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MT58L512L18FF-8.5 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MT58L512L18FS-10 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Micron Technology Inc 功能描述: |
| MT58L512L18FS-10IT | 制造商:Rochester Electronics LLC 功能描述:- Tape and Reel 制造商:Micron Technology Inc 功能描述: |
| MT58L512L18FS-8.5 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MT58L512L18FT-10 | 制造商:Cypress Semiconductor 功能描述:512KX18 SRAM PLASTIC TQFP 3.3V 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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