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参数资料
| 型号： | MTP12P10G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 100V 12A TO220AB |
| 产品变化通告： | Product Obsolescence 01/Jul/2009 |
| 产品目录绘图： | MOSFET TO-220, TO-220AB |
| 标准包装： | 50 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 100V |
| 电流 - 连续漏极(Id) @ 25° C： | 12A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 300 毫欧 @ 6A，10V |
| Id 时的 Vgs(th)（最大）： | 4.5V @ 1mA |
| 闸电荷(Qg) @ Vgs： | 50nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 920pF @ 25V |
| 功率 - 最大： | 75W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 |
| 供应商设备封装： | TO-220AB |
| 包装： | 管件 |
| 其它名称： | MTP12P10GOS |
MTP12P10
Preferred Device
Power MOSFET
12 Amps, 100 Volts
P?Channel TO?220
This Power MOSFET is designed for medium voltage, high speed
power switching applications such as switching regulators, converters,
solenoid and relay drivers.
Features
? Silicon Gate for Fast Switching Speeds ? Switching Times Specified
at 100 ° C
? Designer’s Data ? I DSS , V DS(on) , V GS(th) and SOA Specified
http://onsemi.com
12 AMPERES, 100 VOLTS
R DS(on) = 300 m W
P?Channel
D
?
?
?
at Elevated Temperature
Rugged ? SOA is Power Dissipation Limited
Source?to?Drain Diode Characterized for Use With Inductive Loads
Pb?Free Package is Available*
G
MAXIMUM RATINGS (T C = 25 ° C unless otherwise noted)
S
Rating
Drain?Source Voltage
Symbol
V DSS
Value
100
Unit
Vdc
MARKING DIAGRAM
AND PIN ASSIGNMENT
Drain?Gate Voltage (R GS = 1.0 M W )
Gate?Source Voltage
? Continuous
? Non?repetitive (t p ≤ 50 m s)
V DGR
V GS
V GSM
100
± 20
± 40
Vdc
Vdc
Vpk
4
4
Drain
Drain Current ? Continuous
Drain Current ? Pulsed
I D
I DM
12
28
Adc
TO?220AB
Total Power Dissipation
Derate above 25 ° C
P D
75
0.6
W
W/ ° C
CASE 221A
STYLE 5
MTP12P10G
AYWW
Operating and Storage Temperature Range
Thermal Resistance
? Junction?to?Case
? Junction?to?Ambient °
T J , T stg
R q JC
R q JA
?65 to 150
1.67
62.5
° C
° C/W
1
2
3
1
Gate
2
3
Source
Maximum Lead Temperature for Soldering T L 260 ° C
Purposes, 1/8 ″ from case for 10 seconds
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
MTP12P10
A
Y
WW
G
Drain
= Device Code
= Location Code
= Year
= Work Week
= Pb?Free Package
ORDERING INFORMATION
Device
MTP12P10
MTP12P10G
Package
TO?220AB
TO?220AB
(Pb?Free)
Shipping
50 Units/Rail
50 Units/Rail
*For additional information on our Pb?Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Preferred devices are recommended choices for future use
and best overall value.
? Semiconductor Components Industries, LLC, 2006
June, 2006 ? Rev. 4
1
Publication Order Number:
MTP12P10/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MTP1302 | 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 30V 42A 3-Pin(3+Tab) TO-220 Rail 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MTP1306 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:ON Semiconductor 功能描述: |
| MTP1403BQ8 | 制造商:CYSTEKEC 制造商全称:Cystech Electonics Corp. 功能描述:P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| MTP14N05L | 制造商:未知厂家 制造商全称:未知厂家 功能描述:N-Channel Enhancement MOSFET |
| MTP150 | 制造商:NELLSEMI 制造商全称:Nell Semiconductor Co., Ltd 功能描述:Three-Phase Bridge Rectifier, 150A |
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