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参数资料
| 型号： | MTP12P10G |
| 厂商： | ON Semiconductor |
| 文件页数： | 4/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 100V 12A TO220AB |
| 产品变化通告： | Product Obsolescence 01/Jul/2009 |
| 产品目录绘图： | MOSFET TO-220, TO-220AB |
| 标准包装： | 50 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 100V |
| 电流 - 连续漏极(Id) @ 25° C： | 12A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 300 毫欧 @ 6A，10V |
| Id 时的 Vgs(th)（最大）： | 4.5V @ 1mA |
| 闸电荷(Qg) @ Vgs： | 50nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 920pF @ 25V |
| 功率 - 最大： | 75W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 |
| 供应商设备封装： | TO-220AB |
| 包装： | 管件 |
| 其它名称： | MTP12P10GOS |
MTP12P10
SAFE OPERATING AREA INFORMATION
50
10 m s
10
10 ms
V GS = 20 V
SINGLE PULSE
1 ms
dc
0.1 ms
40
30
20
T C = 25 ° C
1
R DS(on) LIMIT
PACKAGE LIMIT
MTM/MTP12P06
10
MTM/MTP12P06
THERMAL LIMIT MTM/MTP12P10
0
MTM/MTP12P10
1
10
100
0
10
20
30
40
50
60
70
80
90
100
V DS , DRAIN?TO?SOURCE VOLTAGE (VOLTS)
Figure 7. Maximum Rated Forward Biased
Safe Operating Area
FORWARD BIASED SAFE OPERATING AREA
The FBSOA curves define the maximum drain?to?source
voltage and drain current that a device can safely handle
when it is forward biased, or when it is on, or being turned
on. Because these curves include the limitations of
simultaneous high voltage and high current, up to the rating
of the device, they are especially useful to designers of linear
systems. The curves are based on a case temperature of 25 ° C
and a maximum junction temperature of 150 ° C. Limitations
for repetitive pulses at various case temperatures can be
determined by using the thermal response curves. ON
Semiconductor Application Note, AN569, “Transient
Thermal Resistance?General Data and Its Use” provides
detailed instructions.
1
V DS , DRAIN?TO?SOURCE VOLTAGE (VOLTS)
Figure 8. Maximum Rated Switching
Safe Operating Area
SWITCHING SAFE OPERATING AREA
The switching safe operating area (SOA) of Figure 8 is the
boundary that the load line may traverse without incurring
damage to the MOSFET. The fundamental limits are the
peak current, I DM and the breakdown voltage, V (BR)DSS .
The switching SOA shown in Figure 8 is applicable for both
turn?on and turn?off of the devices for switching times less
than one microsecond.
The power averaged over a complete switching cycle
must be less than:
T J(max) ? T C
R q JC
0.5
0.3
D = 0.5
0.2
0.2
0.1
0.1
0.05
0.05
0.02
P (pk)
R q JC (t) = r(t) R q JC
R q JC = 1.67 ° C/W MAX
D CURVES APPLY FOR POWER
0.03
0.02
SINGLE PULSE
0.01
t 1
t 2
DUTY CYCLE, D = t 1 /t 2
PULSE TRAIN SHOWN
READ TIME AT t 1
T J(pk) ? T C = P (pk) R q JC (t)
0.01
0.01
0.02
0.05
0.1
0.2
0.5
1
2 5
10
20
50
100
200
500
1000
t, TIME (ms)
Figure 9. Thermal Response
http://onsemi.com
4
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