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| 型号： | MTP12P10G |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 100V 12A TO220AB |
| 产品变化通告： | Product Obsolescence 01/Jul/2009 |
| 产品目录绘图： | MOSFET TO-220, TO-220AB |
| 标准包装： | 50 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 100V |
| 电流 - 连续漏极(Id) @ 25° C： | 12A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 300 毫欧 @ 6A，10V |
| Id 时的 Vgs(th)（最大）： | 4.5V @ 1mA |
| 闸电荷(Qg) @ Vgs： | 50nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 920pF @ 25V |
| 功率 - 最大： | 75W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 |
| 供应商设备封装： | TO-220AB |
| 包装： | 管件 |
| 其它名称： | MTP12P10GOS |
MTP12P10
ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Drain?Source Breakdown Voltage (V GS = 0, I D = 0.25 mA)
V (BR)DSS
100
?
Vdc
Zero Gate Voltage Drain Current
(V DS = Rated V DSS , V GS = 0)
(V DS = Rated V DSS , V GS = 0, T J = 125 ° C)
I DSS
?
?
10
100
m Adc
Gate?Body Leakage Current, Forward (V GSF = 20 Vdc, V DS = 0)
Gate?Body Leakage Current, Reverse (V GSR = 20 Vdc, V DS = 0)
I GSSF
I GSSR
?
?
100
100
nAdc
nAdc
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage (V DS = V GS , I D = 1.0 mA)
T J = 100 ° C
Static Drain?Source On?Resistance (V GS = 10 Vdc, I D = 6.0 Adc)
V GS(th)
R DS(on)
2.0
1.5
?
4.5
4.0
0.3
Vdc
W
Drain?Source On?Voltage (V GS = 10 V)
(I D = 12 Adc)
(I D = 6.0 Adc, T J = 100 ° C)
V DS(on)
?
?
4.2
3.8
Vdc
Forward Transconductance (V DS = 15 V, I D = 6.0 A)
g FS
2.0
?
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
C iss
?
920
pF
Output Capacitance
Reverse Transfer Capacitance
(V DS = 25 V, V GS = 0, f = 1.0 MHz)
See Figure 10
C oss
C rss
?
?
575
200
SWITCHING CHARACTERISTICS (Note 1) (T J = 100 ° C)
Turn?On Delay Time
t d(on)
?
50
ns
Rise Time
Turn?Off Delay Time
Fall Time
(V DD = 25 V, I D = 0.5 Rated I D , R G = 50 W )
See Figures 12 and 13
t r
t d(off)
t f
?
?
?
150
150
150
Total Gate Charge
Q g
33 (Typ)
50
nC
Gate?Source Charge
Gate?Drain Charge
(V DS = 0.8 Rated V DSS , I D = Rated I D , V GS = 10 V)
See Figure 11
Q gs
Q gd
16 (Typ)
17 (Typ)
?
?
SOURCE?DRAIN DIODE CHARACTERISTICS (Note 1)
Forward On?Voltage
V SD
4.0 (Typ)
5.5
Vdc
Forward Turn?On Time
(I S = Rated I D , V GS = 0)
t on
Limited by stray inductance
Reverse Recovery Time
t rr
300
?
ns
(Typ)
INTERNAL PACKAGE INDUCTANCE (TO?204)
Internal Drain Inductance, (Measured from the contact screw on the header closer to the
L d
5.0 (Typ)
?
nH
source pin and the center of the die)
Internal Source Inductance
(Measured from the source pin, 0.25 ″ from the package
L s
12.5
(Typ)
?
to the source bond pad)
INTERNAL PACKAGE INDUCTANCE (TO?220)
Internal Drain Inductance
(Measured from the contact screw on tab to center of die)
(Measured from the drain lead 0.25 ″ from package to center of die)
L d
3.5 (Typ)
4.5 (Typ)
?
?
nH
Internal Source Inductance
(Measured from the source lead 0.25 ″ from package to source bond pad)
L s
7.5 (Typ)
?
1. Pulse Test: Pulse Width ≤ 300 m s, Duty Cycle ≤ 2%.
http://onsemi.com
2
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