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参数资料
| 型号： | NAND01GR4B2BV1T |
| 厂商： | NUMONYX |
| 元件分类： | PROM |
| 英文描述： | 64M X 16 FLASH 1.8V PROM, 25000 ns, PDSO48 |
| 封装： | 12 X 17 MM, 0.65 MM HEIGHT, PLASTIC, USOP-48 |
| 文件页数： | 27/58页 |
| 文件大小： | 943K |
| 代理商： | NAND01GR4B2BV1T |
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NAND512-B, NAND01G-B, NAND02G-B, NAND04G-B, NAND08G-B
Blocks Lock-Down
The Lock-Down feature provides an additional lev-
el of protection. A Locked-down block cannot be
unlocked by a software command. Locked-Down
blocks can only be unlocked by setting the Write
Protect signal to Low for a minimum of 100ns.
Only locked blocks can be locked-down. The com-
mand has no affect on unlocked blocks.
Refer to Figure 26., Command Latch AC Wave-
forms for details on how to issue the command.
Block Lock Status
In Block Lock mode (PRL High) the Block Lock
Status of each block can be checked by issuing a
Read Block Lock Status command (see Table
10.).
The command consists of:
■
one bus cycle to give the command code
■
three bus cysles to give the block address
After this, a read cycle will then output the Block
Lock Status on the I/O pins on the falling edge of
Chip Enable or Read Enable, whichever occurs
last. Chip Enable or Read Enable do not need to
be toggled to update the status.
The Read Block Lock Status command will not be
accepted while the device is busy (RB Low).
The device will remain in Read Block Lock Status
mode until another command is issued.
Figure 19. Read Block Lock Status Operation
Note: Three address cycles are required for 2,4 and 8 Gb devices. The 512Mb and 1Gb devices only require two address cycles.
Table 16. Block Lock Status
Note: X = Don’t Care.
Status
I/O7-I/O3
I/O2
I/O1
I/O0
Locked
X
0
1
0
Unlocked
X
1
0
Locked-Down
X
0
1
Unlocked in Locked-
Down Area
X
101
I/O
R
Block Address, 3 cycles
ai08669
7Ah
Read Block Lock
Status Command
Add1
Add2
Add3
Dout
Block Lock Status
tWHRL
W
相关PDF资料 |
PDF描述 |
|---|---|
| NAND01GR4B2CV6T | 64M X 16 FLASH 1.8V PROM, 25000 ns, PDSO48 |
| NAND01GR4B2CZA1E | 64M X 16 FLASH 1.8V PROM, 25000 ns, PBGA63 |
| NAND01GW3A0BZB1 | 128M X 8 FLASH 3V PROM, 35 ns, PBGA63 |
| NAND512R4A2CZB6E | 32M X 16 FLASH 1.8V PROM, 35 ns, PBGA55 |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NAND01GR4B2BZA1 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory |
| NAND01GR4B2BZA1E | 制造商:NUMONYX 制造商全称:Numonyx B.V 功能描述:1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory |
| NAND01GR4B2BZA1F | 制造商:NUMONYX 制造商全称:Numonyx B.V 功能描述:1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory |
| NAND01GR4B2BZA6 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory |
| NAND01GR4B2BZA6E | 制造商:NUMONYX 制造商全称:Numonyx B.V 功能描述:1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory |
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