参数资料
型号: NAND01GR4B2BV1T
厂商: NUMONYX
元件分类: PROM
英文描述: 64M X 16 FLASH 1.8V PROM, 25000 ns, PDSO48
封装: 12 X 17 MM, 0.65 MM HEIGHT, PLASTIC, USOP-48
文件页数: 36/58页
文件大小: 943K
代理商: NAND01GR4B2BV1T
41/58
NAND512-B, NAND01G-B, NAND02G-B, NAND04G-B, NAND08G-B
Table 22. DC Characteristics, 3V Devices
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
IDD1
Operating
Current
Sequential
Read
tRLRL minimum
E=VIL, IOUT = 0 mA
-
15
30
mA
IDD2
Program
-
15
30
mA
IDD3
Erase
-
15
30
mA
IDD4
Standby current (TTL)
E=VIH, WP=0/VDD
1
mA
IDD5
Standby Current (CMOS)
E=VDD-0.2,
WP=0/VDD
-
10
50
A
ILI
Input Leakage Current
VIN= 0 to VDDmax
-
±10
A
ILO
Output Leakage Current
VOUT= 0 to VDDmax
-
±10
A
VIH
Input High Voltage
-
VDD+0.8
-
VDD+0.3
V
VIL
Input Low Voltage
-
-0.3
-
VDD+0.2
V
VOH
Output High Voltage Level
IOH = -100A
2.4
-
V
VOL
Output Low Voltage Level
IOL = 100A
-
0.4
V
IOL (RB)
Output Low Current (RB)
VOL = 0.4V
8
10
mA
VLKO
VDD Supply Voltage (Erase and
Program lockout)
-
1.7
V
相关PDF资料
PDF描述
NAND01GR4B2CV6T 64M X 16 FLASH 1.8V PROM, 25000 ns, PDSO48
NAND01GR4B2CZA1E 64M X 16 FLASH 1.8V PROM, 25000 ns, PBGA63
NAND01GW3A0BZB1 128M X 8 FLASH 3V PROM, 35 ns, PBGA63
NAND512R4A2CZB6E 32M X 16 FLASH 1.8V PROM, 35 ns, PBGA55
NAND512R4A0BZA6 32M X 16 FLASH 1.8V PROM, 35 ns, PBGA63
相关代理商/技术参数
参数描述
NAND01GR4B2BZA1 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
NAND01GR4B2BZA1E 制造商:NUMONYX 制造商全称:Numonyx B.V 功能描述:1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory
NAND01GR4B2BZA1F 制造商:NUMONYX 制造商全称:Numonyx B.V 功能描述:1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory
NAND01GR4B2BZA6 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
NAND01GR4B2BZA6E 制造商:NUMONYX 制造商全称:Numonyx B.V 功能描述:1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory