参数资料
型号: NAND01GR4B2BV1T
厂商: NUMONYX
元件分类: PROM
英文描述: 64M X 16 FLASH 1.8V PROM, 25000 ns, PDSO48
封装: 12 X 17 MM, 0.65 MM HEIGHT, PLASTIC, USOP-48
文件页数: 28/58页
文件大小: 943K
代理商: NAND01GR4B2BV1T
NAND512-B, NAND01G-B, NAND02G-B, NAND04G-B, NAND08G-B
34/58
Figure 20. Block Protection State Diagram
Note: PRL must be High for the software commands to be accepted.
AI08663c
Locked
Locked-Down
Unlocked in
Locked Area
Power-Up
Block Unlock
Command
Blocks Lock-Down
Command
WP VIL >100ns
Blocks Lock
Command
WP VIL >100ns
(start + end block address)
Unlocked in
Locked-Down
Area
Blocks Lock-Down
Command
WP VIL >100ns
相关PDF资料
PDF描述
NAND01GR4B2CV6T 64M X 16 FLASH 1.8V PROM, 25000 ns, PDSO48
NAND01GR4B2CZA1E 64M X 16 FLASH 1.8V PROM, 25000 ns, PBGA63
NAND01GW3A0BZB1 128M X 8 FLASH 3V PROM, 35 ns, PBGA63
NAND512R4A2CZB6E 32M X 16 FLASH 1.8V PROM, 35 ns, PBGA55
NAND512R4A0BZA6 32M X 16 FLASH 1.8V PROM, 35 ns, PBGA63
相关代理商/技术参数
参数描述
NAND01GR4B2BZA1 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
NAND01GR4B2BZA1E 制造商:NUMONYX 制造商全称:Numonyx B.V 功能描述:1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory
NAND01GR4B2BZA1F 制造商:NUMONYX 制造商全称:Numonyx B.V 功能描述:1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory
NAND01GR4B2BZA6 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
NAND01GR4B2BZA6E 制造商:NUMONYX 制造商全称:Numonyx B.V 功能描述:1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory