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参数资料
| 型号： | NAND01GW3B2CN1E |
| 厂商： | NUMONYX |
| 元件分类： | PROM |
| 英文描述： | 128M X 8 FLASH 3V PROM, 25000 ns, PDSO48 |
| 封装： | 12 X 20 MM, ROHS COMPLIANT, PLASTIC, TSOP-48 |
| 文件页数： | 13/65页 |
| 文件大小： | 1473K |
| 代理商： | NAND01GW3B2CN1E |
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Device operations
NAND01G-B2C
6
Device operations
The following section gives the details of the device operations.
6.1
Read memory array
At power-up the device defaults to read mode. To enter read mode from another mode the
Read command must be issued, see Table 10: Commands.
Once a Read command is issued two types of operations are available: random read and
page read.
6.1.1
Random read
Each time the Read command is issued the first read is random read.
6.1.2
Page read
After the first random read access, the page data (2112 bytes or 1056 words) is transferred
complete the Ready/Busy signal goes High. The data can then be read out sequentially
(from selected column address to last column address) by pulsing the Read Enable signal.
Alternatively, the user may check the transfer completion by issuing the Read Status
Register command and checking SR6 by toggling R. In the latter case, the device will keep
on outputting the read status register until the 00h command is issued.
The device can output random data in a page, instead of the consecutive sequential data, by
issuing a Random Data Output command.
The Random Data Output command can be used to skip some data during a sequential
data output.
The sequential operation can be resumed by changing the column address of the next data
to be output, to the address which follows the Random Data Output command.
The Random Data Output command can be issued as many times as required within a
page.
The Random Data Output command is not accepted during cache read operations.
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| NAND512W3B3BZA1F | 64M X 8 FLASH 3V PROM, 35 ns, PBGA63 |
| NAND512W3B3CV1 | 64M X 8 FLASH 3V PROM, 35 ns, PDSO48 |
| NAND01GR4B3AV1F | 64M X 16 FLASH 1.8V PROM, 35 ns, PDSO48 |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NAND01GW3B2CN1F | 制造商:NUMONYX 制造商全称:Numonyx B.V 功能描述:1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory |
| NAND01GW3B2CN6 | 制造商:STMicroelectronics 功能描述:128M X 8 FLASH 3V PROM, 35 ns, PDSO48 |
| NAND01GW3B2CN6E | 功能描述:IC FLASH 1GBIT 48TSOP RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 产品变化通告:Product Discontinuation 26/Apr/2010 标准包装:136 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 同步，DDR II 存储容量:18M（1M x 18） 速度:200MHz 接口:并联 电源电压:1.7 V ~ 1.9 V 工作温度:0°C ~ 70°C 封装/外壳:165-TBGA 供应商设备封装:165-CABGA（13x15） 包装:托盘 其它名称:71P71804S200BQ |
| NAND01GW3B2CN6F | 制造商:NUMONYX 制造商全称:Numonyx B.V 功能描述:1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory |
| NAND01GW3B2CWFD | 制造商:Micron Technology Inc 功能描述:NAND - Gel-pak, waffle pack, wafer, diced wafer on film |
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