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参数资料
| 型号： | NAND01GW3B2CN1E |
| 厂商： | NUMONYX |
| 元件分类： | PROM |
| 英文描述： | 128M X 8 FLASH 3V PROM, 25000 ns, PDSO48 |
| 封装： | 12 X 20 MM, ROHS COMPLIANT, PLASTIC, TSOP-48 |
| 文件页数： | 7/65页 |
| 文件大小： | 1473K |
| 代理商： | NAND01GW3B2CN1E |
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NAND01G-B2C
Signal descriptions
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3.7
Write Enable (W)
The Write Enable input, W, controls writing to the command interface, input address and
data latches. Both addresses and data are latched on the rising edge of Write Enable.
During power-up and power-down a recovery time of 10 s (min) is required before the
command interface is ready to accept a command. It is recommended to keep Write Enable
High during the recovery time.
3.8
Write Protect (WP)
The Write Protect pin is an input that gives a hardware protection against unwanted program
or erase operations. When Write Protect is Low, VIL, the device does not accept any
program or erase operations.
It is recommended to keep the Write Protect pin Low, VIL, during power-up and power-down.
3.9
Ready/Busy (RB)
The Ready/Busy output, RB, is an open-drain output that can be used to identify if the P/E/R
controller is currently active. When Ready/Busy is Low, VOL, a read, program or erase
operation is in progress. When the operation completes Ready/Busy goes High, VOH.
The use of an open-drain output allows the Ready/Busy pins from several memories to be
connected to a single pull-up resistor. A Low will then indicate that one, or more, of the
memories is busy.
Refer to the Section 11.1: Ready/Busy signal electrical characteristics for details on how to
calculate the value of the pull-up resistor.
During power-up and power-down a minimum recovery time of 10 s is required before the
command interface is ready to accept a command. During this period the RB signal is Low,
VOL.
3.10
VDD supply voltage
VDD provides the power supply to the internal core of the memory device. It is the main
power supply for all operations (read, program and erase).
An internal voltage detector disables all functions whenever VDD is below VLKO (see
power-transitions.
Each device in a system should have VDD decoupled with a 0.1 F capacitor. The PCB track
widths should be sufficient to carry the required program and erase currents.
3.11
VSS ground
Ground, VSS, is the reference for the power supply. It must be connected to the system
ground.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NAND01GW3B2CN1F | 制造商:NUMONYX 制造商全称:Numonyx B.V 功能描述:1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory |
| NAND01GW3B2CN6 | 制造商:STMicroelectronics 功能描述:128M X 8 FLASH 3V PROM, 35 ns, PDSO48 |
| NAND01GW3B2CN6E | 功能描述:IC FLASH 1GBIT 48TSOP RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 产品变化通告:Product Discontinuation 26/Apr/2010 标准包装:136 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 同步，DDR II 存储容量:18M（1M x 18） 速度:200MHz 接口:并联 电源电压:1.7 V ~ 1.9 V 工作温度:0°C ~ 70°C 封装/外壳:165-TBGA 供应商设备封装:165-CABGA（13x15） 包装:托盘 其它名称:71P71804S200BQ |
| NAND01GW3B2CN6F | 制造商:NUMONYX 制造商全称:Numonyx B.V 功能描述:1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory |
| NAND01GW3B2CWFD | 制造商:Micron Technology Inc 功能描述:NAND - Gel-pak, waffle pack, wafer, diced wafer on film |
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