- 您现在的位置：买卖IC网 > PDF目录189002 > NAND01GW3B2CN1E (NUMONYX) 128M X 8 FLASH 3V PROM, 25000 ns, PDSO48 PDF资料下载
参数资料
| 型号： | NAND01GW3B2CN1E |
| 厂商： | NUMONYX |
| 元件分类： | PROM |
| 英文描述： | 128M X 8 FLASH 3V PROM, 25000 ns, PDSO48 |
| 封装： | 12 X 20 MM, ROHS COMPLIANT, PLASTIC, TSOP-48 |
| 文件页数： | 18/65页 |
| 文件大小： | 1473K |
| 代理商： | NAND01GW3B2CN1E |
第1页第2页第3页第4页第5页第6页第7页第8页第9页第10页第11页第12页第13页第14页第15页第16页第17页当前第18页第19页第20页第21页第22页第23页第24页第25页第26页第27页第28页第29页第30页第31页第32页第33页第34页第35页第36页第37页第38页第39页第40页第41页第42页第43页第44页第45页第46页第47页第48页第49页第50页第51页第52页第53页第54页第55页第56页第57页第58页第59页第60页第61页第62页第63页第64页第65页
NAND01G-B2C
Device operations
25/65
Figure 9.
Cache read operation
6.3
Page program
The page program operation is the standard operation to program data to the memory array.
Within a given block, the pages must be programmed sequentially. Random page address
programming is not recommended.
The memory array is programmed by page, however partial page programming is allowed
where any number of bytes (1 to 2112) or words (1 to 1056) can be programmed.
The maximum number of consecutive partial page program operations allowed in the same
page is four. After exceeding this a Block Erase command must be issued before any further
program operations can take place in that page.
6.3.1
Sequential input
To input data sequentially the addresses must be sequential and remain in one block.
For sequential input each page program operation consists of five steps (see Figure 10):
1.
one bus cycle is required to setup the Page Program (sequential input) command (see
2.
four bus cycles are then required to input the program address (refer to Table 6 and
3.
the data is then loaded into the data registers
4.
one bus cycle is required to issue the Page Program Confirm command to start the
P/E/R controller. The P/E/R will only start if the data has been loaded in step 3
5.
the P/E/R controller then programs the data into the array.
I/O
R/B
ai14293
30h
00h
D0
tBLBHx
R
tBLBH1
C1
C2
R1
R2
31h
Random
tBLBHx
...
Dn
31h
D0
Sequential
AL
W
CL
相关PDF资料 |
PDF描述 |
|---|---|
| NAND04GR3B3AN6 | 512M X 8 FLASH 1.8V PROM, 35 ns, PDSO48 |
| NAND512W3B3BZA1F | 64M X 8 FLASH 3V PROM, 35 ns, PBGA63 |
| NAND512W3B3CV1 | 64M X 8 FLASH 3V PROM, 35 ns, PDSO48 |
| NAND01GR4B3AV1F | 64M X 16 FLASH 1.8V PROM, 35 ns, PDSO48 |
| NAND01GW4B3CZA1E | 64M X 16 FLASH 3V PROM, 35 ns, PBGA63 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| NAND01GW3B2CN1F | 制造商:NUMONYX 制造商全称:Numonyx B.V 功能描述:1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory |
| NAND01GW3B2CN6 | 制造商:STMicroelectronics 功能描述:128M X 8 FLASH 3V PROM, 35 ns, PDSO48 |
| NAND01GW3B2CN6E | 功能描述:IC FLASH 1GBIT 48TSOP RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 产品变化通告:Product Discontinuation 26/Apr/2010 标准包装:136 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 同步，DDR II 存储容量:18M（1M x 18） 速度:200MHz 接口:并联 电源电压:1.7 V ~ 1.9 V 工作温度:0°C ~ 70°C 封装/外壳:165-TBGA 供应商设备封装:165-CABGA（13x15） 包装:托盘 其它名称:71P71804S200BQ |
| NAND01GW3B2CN6F | 制造商:NUMONYX 制造商全称:Numonyx B.V 功能描述:1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory |
| NAND01GW3B2CWFD | 制造商:Micron Technology Inc 功能描述:NAND - Gel-pak, waffle pack, wafer, diced wafer on film |
发布紧急采购，3分钟左右您将得到回复。