参数资料
型号: NAND02GR4B2BZB1
厂商: STMICROELECTRONICS
元件分类: PROM
英文描述: 128M X 16 FLASH 1.8V PROM, 35 ns, PBGA63
封装: 9.50 X 12 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, TFBGA-63
文件页数: 32/57页
文件大小: 887K
代理商: NAND02GR4B2BZB1
NAND01G-B, NAND02G-B, NAND04G-B, NAND08G-B
38/57
PROGRAM AND ERASE TIMES AND ENDURANCE CYCLES
The Program and Erase times and the number of
Program/ Erase cycles per block are shown in Ta-
Table 18. Program, Erase Times and Program Erase Endurance Cycles
MAXIMUM RATING
Stressing the device above the ratings listed in Ta-
permanent damage to the device. These are
stress ratings only and operation of the device at
these or any other conditions above those indicat-
ed in the Operating sections of this specification is
not implied. Exposure to Absolute Maximum Rat-
ing conditions for extended periods may affect de-
vice
reliability.
Refer
also
to
the
STMicroelectronics SURE Program and other rel-
evant quality documents.
Table 19. Absolute Maximum Ratings
Note: 1. Minimum Voltage may undershoot to –2V for less than 20ns during transitions on input and I/O pins. Maximum voltage may over-
shoot to VDD + 2V for less than 20ns during transitions on I/O pins.
2. Compatibility with Lead-free soldering processes in accordance with ECOPACK 7191395 specifications. Not exceeding 250°C for
more than 10s, and peaking at 260°C.
Parameters
NAND Flash
Unit
Min
Typ
Max
Page Program Time
300
700
s
Block Erase Time
2
3ms
Program/Erase Cycles (per block)
100,000
cycles
Data Retention
10
years
Symbol
Parameter
Value
Unit
Min
Max
TBIAS
Temperature Under Bias
– 50
125
°C
TSTG
Storage Temperature
– 65
150
°C
TLEAD
Lead temperature during soldering (2)
260
°C
VIO
(1)
Input or Output Voltage
1.8V devices
– 0.6
2.7
V
3 V devices
– 0.6
4.6
V
VDD
Supply Voltage
1.8V devices
– 0.6
2.7
V
3 V devices
– 0.6
4.6
V
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