参数资料
| 型号： | NCP1015ST65T3G |
| 厂商： | ON Semiconductor |
| 文件页数： | 16/22页 |
| 文件大小： | 0K |
| 描述： | IC OFFLINE SWIT SMPS CM SOT223 |
| 标准包装： | 4,000 |
| 输出隔离： | 隔离 |
| 频率范围： | 59kHz ~ 71kHz |
| 输入电压： | 8.1 V ~ 10 V |
| 输出电压： | 700V |
| 功率（瓦特）： | 19W |
| 工作温度： | -40°C ~ 125°C |
| 封装/外壳： | TO-261-4，TO-261AA |
| 供应商设备封装： | SOT-223 |
| 包装： | 带卷 (TR) |
NCP1015
L Pcritical +
(V in @ V r ) 2 @ h
2 @ f sw @ [P out @ (V r 2 ) 2 @ V r @ V in ) V in 2 )]
(eq. 21)
with V r = N . (V out + V f ) and h the efficiency.
If L p critical gives the inductance value above which
DCM operation is lost, there is another expression we can
write to connect L p , the primary peak current bounded by the
NCP1015 and the maximum duty ? cycle that needs to stay
below 50%:
where V IN(min) corresponds to the lowest bulk voltage,
hence the longest ton duration or largest duty ? cycle. I P(max)
is the available peak current from the considered part, e.g.
450 mA typical for the NCP1015 (however, the minimum
value of this parameter shall be considered for reliable
evaluation). Combining Equations 21 and 22 gives the
L P(max) +
D max @ V IN(min) @ t sw
I P(max)
(eq. 22)
maximum theoretical power you can pass respecting the
peak current capability of the NCP1015, the maximum
duty ? cycle and the discontinuous mode operation:
P max + t sw 2 @ V IN(min) 2 @ V r 2 @ h @
f sw
(2L P(max) V r 2 ) 4L P(max) V r V IN(min) ) V IN(min) 2 )
(eq. 23)
From Equation 22 we obtain the operating duty ? cycle D:
D +
I p @ L p
V in @ t sw
(eq. 24)
I D(rms) + I p @
D
3
This lets us calculate the RMS current circulating in the
MOSFET:
(eq. 25)
From this equation, we obtain the average dissipation in
the MOSFET:
3
P avg + 1 @ I p 2 @ D @ R DS(on) (eq. 26)
to which switching losses shall be added.
If we stick to Equation 23, compute Lp and follow the
above calculations, we will discover that a power supply
built with the NCP1015 and operating from a 100 Vac line
minimum will not be able to deliver more than 7 W
continuous, regardless of the selected switching frequency
(however the transformer core size will go down as f sw is
increased). This number grows up significantly when
operated from single European mains (18 W).
For more different flyback converters then are the below
examples we recommend use following support:
1) Application note AND8125/D “Evaluating the power
capability of the NCP101X members”
2) Application note AND8134/D “Designing Converters
with the NCP101X members.”
3) Application note AND8142/D “A 6W/12W Universal
mains adapter with NCP101X series”.
4) The PSpice or Orcad simulation models
Example 1.: A 12 V 7.0 W SMPS Operating on a Large
Mains with NCP1015:
V in = 100 Vac ÷ 250 Vac or 140 Vdc ÷ 350 Vdc once
rectified, assuming a low bulk ripple
Efficiency = 80%
V out = 12 V, I out = 580 mA
f sw = 65 kHz
I P(max) = 450 mA ? 10% = 405 mA
Applying the above equations leads to :
Selected maximum reflected voltage = 120 V
with V out = 12 V, secondary drop = 0.5 V 3 Np : Ns = 1 : 0.1
L p critical = 3.9 mH
I p = 250 mA
D max = 0.39
I DRAIN(rms) = 90 mA
P MOSFET = 202 mW at R DS(on) = 25 W (T J > 100 ° C)
P DSS = 1.2 mA x 350 V = 420 mW, if DSS is used
Secondary diode voltage stress = (350 x 0.1) + 12 = 47 V
(e.g. a MBRS360T3, 3 A / 60 V would fit)
Example 2.: A 12 V 16 W SMPS Operating on Narrow
European Mains with NCP1015:
V in = 230 Vac ± 15%, or 276 Vdc ÷ 370 Vdc
Efficiency = 80%
V out = 12 V, I out = 1.25 A
f sw = 65 kHz
I P(max) = 450 mA ? 10% = 405 mA
Applying the equations leads to :
Selected maximum reflected voltage = 250 V
with V out = 12 V, secondary drop = 0.5 V 3 Np : Ns = 1:0.05
L p = 7,2 mH
I p = 0.27 mA
D max = 0.41
I DRAIN(rms) = 100 mA
P MOSFET = 250 mW at R DS(on) = 25 W (T J > 100 ° C)
P DSS = 1.2 mA x 370 V = 444 mW, if DSS is used below an
ambient of 50 ° C.
Secondary diode voltage stress = (370 x 0.05) + 12 = 30.5 V
(e.g. a MBRS340T3, 3 A / 40 V)
http://onsemi.com
16
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