参数资料
| 型号： | NCP1015ST65T3G |
| 厂商： | ON Semiconductor |
| 文件页数： | 17/22页 |
| 文件大小： | 0K |
| 描述： | IC OFFLINE SWIT SMPS CM SOT223 |
| 标准包装： | 4,000 |
| 输出隔离： | 隔离 |
| 频率范围： | 59kHz ~ 71kHz |
| 输入电压： | 8.1 V ~ 10 V |
| 输出电压： | 700V |
| 功率（瓦特）： | 19W |
| 工作温度： | -40°C ~ 125°C |
| 封装/外壳： | TO-261-4，TO-261AA |
| 供应商设备封装： | SOT-223 |
| 包装： | 带卷 (TR) |
NCP1015
Please note that these calculations assume a flat DC rail
whereas a 10 ms ripple naturally affects the final voltage
available on the transformer end. Once the Bulk capacitor
has been selected, one should check that the resulting ripple
(min V bulk ?) is still compatible with the above calculations.
As an example, to benefit from the largest operating range,
a 7 W board was built with a 47 m F bulk capacitor which
ensured discontinuous operation even in the ripple
minimum waves.
MOSFET Protection
As in any Flyback design, it is important to limit the drain
excursion to a safe value, e.g. below the MOSFET BVdss
which is 700 V. Figures 26A, B, and C present possible
implementations:
HV
HV
HV
Rclamp
Cclamp
Dz
D
D
1
2
3
8
7
6
1
2
3
8
7
6
1
2
3
8
7
6
CVcc
4 5
NCP1015
C
CVcc
4 5
NCP1015
CVc
c
4 5
NCP1015
A
B
Figure 26. Different Options to Clamp the Leakage Spike
C
Figure 26A: The simple capacitor limits the voltage
according to Equation 15. This option is only valid for low
power applications, e.g. below 5 W, otherwise chances exist
to destroy the MOSFET. After evaluating the leakage
inductance, you can compute C with Equation 15. Typical
values are between 100 pF and up to 470 pF. Large
capacitors increase capacitive losses.
Figure 26B: The most standard circuitry called the RCD
network. You calculate R clamp and C clamp using the
following formulas:
current. Worse case occurs when I p and V in are maximum
and V out is close to reach the steady ? state value.
Figure 26C: This option is probably the most expensive of
all three but it offers the best protection degree. If you need
a very precise clamping level, you must implement a zener
diode or a TVS. There are little technology differences
behind a standard zener diode and a TVS. However, the die
area is far bigger for a transient suppressor than that of zener.
A 5 W zener diode like the 1N5388B will accept 180 W peak
power if it lasts less than 8.3 ms. If the peak current in the
R clamp +
2 @ V clamp @ (V clamp * (V out ) V f sec) @ N)
L leak @ I p 2 @ f sw (eq. 27)
worse case (e.g. when the PWM circuit maximum current
limit works) multiplied by the nominal zener voltage
exceeds these 180 W, then the diode will be destroyed when
C clamp +
V ripple @ f sw @ R clamp
V clamp
(eq. 28)
V clamp is usually selected 50 ? 80 V above the reflected
value N x (V out + V f ). The diode needs to be a fast one and
a MUR160 represents a good choice. One major drawback
of the RCD network lies in its dependency upon the peak
the supply experiences overloads. A transient suppressor
like the P6KE200 still dissipates 5 W of continuous power
but is able to accept surges up to 600 W @ 1 ms. Select the
zener or TVS clamping level between 40 to 80 volts above
the reflected output voltage when the supply is heavily
loaded.
http://onsemi.com
17
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