参数资料
| 型号： | NCP1015ST65T3G |
| 厂商： | ON Semiconductor |
| 文件页数： | 4/22页 |
| 文件大小： | 0K |
| 描述： | IC OFFLINE SWIT SMPS CM SOT223 |
| 标准包装： | 4,000 |
| 输出隔离： | 隔离 |
| 频率范围： | 59kHz ~ 71kHz |
| 输入电压： | 8.1 V ~ 10 V |
| 输出电压： | 700V |
| 功率（瓦特）： | 19W |
| 工作温度： | -40°C ~ 125°C |
| 封装/外壳： | TO-261-4，TO-261AA |
| 供应商设备封装： | SOT-223 |
| 包装： | 带卷 (TR) |
NCP1015
ELECTRICAL CHARACTERISTICS (For typical values T J =25 ° C, for min/max values T J = ? 40 ° Cto125 ° C, V CC =8V unless otherwise noted)
Symbol
Rating
Pin
Min
Typ
Max
Unit
SUPPLY SECTION AND V CC MANAGEMENT
V CC(off)
V CC(on)
V CCLATCH
D V CC
ICC1
ICC1
V clamp
V CC increasing level at which the current source turns ? off
V CC decreasing level at which the current source turns ? on
Decreasing level at which the Latch ? off phase Ends
Hysteresis between V CC(off)
Internal IC consumption, MOSFET switching at 65 kHz
Internal IC consumption, MOSFET switching at 100 kHz
Active zener voltage positive offset to V CC(off)
1
1
1
1
1
1
1
7.9
6.9
4.4
?
?
?
140
8.5
7.5
4.7
1.0
0.92
0.95
200
9.1
8.1
5.1
?
1.1
1.15
300
V
V
V
mA
mA
mV
POWER SWITCH CIRCUIT
R DS(on)
Power Switch Circuit on ? state resistance (Id = 50 mA)
W
T J = 25 ° C
T J = 125 ° C
5
5
?
?
11
?
19
24
V dsb
Power Switch Circuit & Startup breakdown voltage
5
700
?
?
V
(I DS(off) = 100 m A, T J = 25 ° C)
I DS(off)
Power Switch & Startup breakdown voltage off ? state leakage current
m A
T J = ? 40 ° C (Vds = 650 V)
T J = 25 ° C (Vds = 700 V)
T J = 125 ° C (Vds = 700 V)
5
5
5
?
?
?
70
50
30
120
?
?
Switching characteristics (R L = 50 W , Vds set for Ids = 0.7 x Ids lim )
ns
t on
t off
Turn ? on time (90% ? 10%)
Turn ? off time (10% ? 90%)
5
5
?
?
20
10
?
?
INTERNAL START ? UP CURRENT SOURCE
IC1
IC2
High ? voltage current source, V CC = 8 V
High ? voltage current source, V CC = 0
0 ° C < T J < 125 ° C
? 40 ° C < T J < 125 ° C
1
1
5.0
5.0
?
8.0
8.0
10
10
11
?
mA
mA
CURRENT COMPARATOR T J = 25 5 C (Note 2)
I peak
I Lskip
t DEL
t LEB
Maximum internal current set ? point
Default internal current set ? point for skip cycle operation,
percentage Ipeak max
Propagation delay from current detection to drain OFF state
Leading Edge Blanking Duration
5
?
?
?
405
?
?
?
450
25
125
250
495
?
?
?
mA
%
ns
ns
INTERNAL OSCILLATOR
f OSC
f OSC
f dither
D max
Oscillation frequency, 65 kHz version, T J = 25 ° C (Note 2)
Oscillation frequency, 100 kHz version, T J = 25 ° C (Note 2)
Frequency dithering compared to switching frequency (with active DSS)
Maximum Duty ? cycle
59
90
?
62
65
100
± 3.3
67
71
110
?
72
kHz
kHz
%
%
FEEDBACK SECTION
R up
t ss
Internal pull ? up resistor
Internal soft ? start (guaranteed by design)
4
?
?
?
18
1.0
?
?
k W
ms
SKIP CYCLE GENERATION
V skip
Default skip mode level on FB pin
4
0.5
V
TEMPERATURE MANAGEMENT
TSD
Temperature shutdown
Hysteresis in shutdown
150
50
° C
° C
2. See characterization curves for temperature evolution
http://onsemi.com
4
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