参数资料
型号: NCP1015ST65T3G
厂商: ON Semiconductor
文件页数: 3/22页
文件大小: 0K
描述: IC OFFLINE SWIT SMPS CM SOT223
标准包装: 4,000
输出隔离: 隔离
频率范围: 59kHz ~ 71kHz
输入电压: 8.1 V ~ 10 V
输出电压: 700V
功率(瓦特): 19W
工作温度: -40°C ~ 125°C
封装/外壳: TO-261-4,TO-261AA
供应商设备封装: SOT-223
包装: 带卷 (TR)
NCP1015
V CC
Startup Source
V CC 1
UVLO
Management
Drain
High when V CC t 3 V
250 ns
L.E.B.
R sense
8 GND
NC 2
4V
EMI Jittering
65 kHz
100 kHz
Clock
Set
Reset
Flip ? Flop
D max = 65%
Q
Driver
7
GND
Reset
GND 3
18 k
Error flag armed?
0.5 V
?
+
V CC
Overload?
Soft ? Start
Startup Sequence
Overload
+
-
FB 4
Drain
5
DRAIN
Figure 2. Simplified Internal Circuit Architecture
MAXIMUM RATINGS
Symbol
V CC
Vds
Ids pk
I_V CC
R q JL
R q JA
R q JL
R q JA
TJ MAX
Rating
Power Supply voltage on all pins, except pin 5 (drain)
Drain voltage
Drain peak current during transformer saturation
Maximum current into pin 1
Thermal Characteristics
P Suffix, Case 626A
Junction ? to ? Lead
Junction ? to ? Air, 2.0 oz (70 m m) Printed Circuit Copper Clad
0.36 Sq. Inch (2.32 Sq. Cm)
1.0 Sq. Inch (6.45 Sq. Cm)
ST Suffix, Plastic Package Case 318E
Junction ? to ? Lead
Junction ? to ? Air, 2.0 oz (70 m m) Printed Circuit Copper Clad
0.36 Sq. Inch (2.32 Sq. Cm)
1.0 Sq. Inch (6.45 Sq. Cm)
Maximum Junction Temperature
Storage Temperature Range
ESD Capability, Human Body Model (HBM) (All pins except HV)
ESD Capability, Machine Model (MM)
Value
? 0.3 to 10
? 0.3 to 700
1
15
9.0
77
60
14
74
55
150
? 60 to +150
2
200
Unit
V
V
A
mA
° C/W
° C
° C
kV
V
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
http://onsemi.com
3
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