参数资料
| 型号： | NCP1282BDR2G |
| 厂商： | ON Semiconductor |
| 文件页数： | 4/22页 |
| 文件大小： | 0K |
| 描述： | IC REG CTRLR BST FLYBK VM 16SOIC |
| 标准包装： | 1 |
| PWM 型： | 电压模式 |
| 输出数： | 2 |
| 频率 - 最大： | 1MHz |
| 占空比： | 85% |
| 电源电压： | 8.5 V ~ 20 V |
| 降压： | 无 |
| 升压： | 是 |
| 回扫： | 是 |
| 反相： | 无 |
| 倍增器： | 无 |
| 除法器： | 无 |
| Cuk： | 无 |
| 隔离： | 无 |
| 工作温度： | -40°C ~ 125°C |
| 封装/外壳： | 16-SOIC（0.154"，3.90mm 宽） |
| 包装： | 剪切带 (CT) |
| 其它名称： | NCP1282BDR2GOSCT |
NCP1282
MAXIMUM RATINGS (Notes 1 and 2)
Rating
Line Voltage
Auxiliary Supply, OUT1, OUT2
All Other Inputs/Outputs Voltage
All Other Inputs/Outputs Current
5.0 V Reference Output Current
5.0 V Reference Output Voltage
OUT1 Peak Output Current (D = 2%)
OUT2 Peak Output Current (D = 2%)
Operating Junction Temperature
Storage Temperature Range
Power Dissipation (T A = 25 ? C, 2.0 Oz Cu, 1.0 Sq Inch Printed Circuit Copper Clad)
D Suffix, Plastic Package Case 751B (SO--16)
Thermal Resistance, Junction to Ambient (2.0 Oz Cu Printed Circuit Copper Clad)
D Suffix, Plastic Package Case 751B (SO--16)
0.36 Sq In
1.0 Sq In
Symbol
V in
V AUX , V outx
V IO
I IO
I REF
V REF
I out1
I out2
T J
T stg
P D
R θ JA
Value
500
20
10
5.0
10
--0.3 to 6.0
2.5
1.0
–40 to +125
–55 to +150
0.95
120
105
Unit
V
V
V
mA
mA
V
A
A
? C
? C
W
? C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. This device series contains ESD protection and exceeds the following tests:
Pins 2--16: Human Body Model 2000 V per MIL–STD–883, Method 3015.
Machine Model Method 160 V.
Pin 1 is the HV startup of the device and is rated to the max rating of the part, or 500 V.
2. This device contains Latchup protection and exceeds ? 100 mA per JEDEC Standard JESD78.
http://onsemi.com
4
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