参数资料
| 型号： | NCP1282BDR2G |
| 厂商： | ON Semiconductor |
| 文件页数： | 6/22页 |
| 文件大小： | 0K |
| 描述： | IC REG CTRLR BST FLYBK VM 16SOIC |
| 标准包装： | 1 |
| PWM 型： | 电压模式 |
| 输出数： | 2 |
| 频率 - 最大： | 1MHz |
| 占空比： | 85% |
| 电源电压： | 8.5 V ~ 20 V |
| 降压： | 无 |
| 升压： | 是 |
| 回扫： | 是 |
| 反相： | 无 |
| 倍增器： | 无 |
| 除法器： | 无 |
| Cuk： | 无 |
| 隔离： | 无 |
| 工作温度： | -40°C ~ 125°C |
| 封装/外壳： | 16-SOIC（0.154"，3.90mm 宽） |
| 包装： | 剪切带 (CT) |
| 其它名称： | NCP1282BDR2GOSCT |
NCP1282
ELECTRICAL CHARACTERISTICS (continued) (V in = 48 V, V AUX = 12 V, V UVOV = 2.3 V, V EA = open, V CSKIP = 0 V,
V CS = 0 V, V SS = open, R T = 13.7 k Ω , C AUX = 10 m F, C T = 470 pF, C out1 = C out2 = 100 pF, C UVOV = 0.01 m F, C CSKIP = 6800 pF,
R D = 25 k Ω , R SYNC = 5.0 k Ω , C REF = 0.1 m F, R FF = 29.4 k Ω , C FF = 470 pF. For typical values T J = 25 ? C, for min/max values, T J is – 40 ? C to
125 ? C, unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
CURRENT LIMIT AND THERMAL SHUTDOWN
Cycle–by–Cycle Threshold Voltage (V out = 10 V)
Propagation Delay to Output
(V CS = V ILIM to 1.0 V, LEB Disabled, V out = 10 V)
T J = 25 ? C
T J = –40 ? C to 125 ? C
Thermal Shutdown Threshold (Junction Temperature Increasing, Note 4)
Thermal Shutdown Hysteresis (Temperature Decreasing, Note 4)
V ILIM
t ILIM
T SHDN
T H
472
–
–
–
–
495
80
–
160
25
512
90
110
–
–
mV
ns
? C
? C
LEADING EDGE BLANKING
Offset Voltage
Blanking Time
V EA Threshold that Disables LEB (Measured together with t LEB )
V LEB(offset)
t LEB
V LEB(dis)
–
65
4.1
10
75
–
–
116
–
mV
ns
V
CYCLE SKIP CURRENT LIMIT MODE
Charge Current (V CSKIP = 1.25 V)
Discharge Current (V CSKIP = 1.25 V)
Number of Pulses to Exit Cycle Skip Mode
Upper Threshold Voltage (Ramp up V CSKIP , V CS = 1.0 V)
Lower Threshold Voltage (Ramp down V CSKIP )
Threshold Voltage Hysteresis
I CSKIP(C)
I CSKIP(D)
Pulse CSKIP
V CSKIP(peak)
V CSKIP(valley)
V CSKIP(H)
66
6.5
–
2.83
0.39
–
90
8.6
3
3.03
0.465
2.5
111
11
–
3.24
0.52
–
m A
m A
--
V
V
V
5.0 V REFERENCE
Output Voltage (I REF = 0 mA)
Load Regulation (I REF = 0 to 5.0 mA)
Line Regulation (V AUX = 10.5 to 20 V, I REF = 0 mA)
Discharge Current (V UVOV = 0 V, V REF = 2.5 V)
V REF
V REF(Load)
V REF(line)
I REF(D)
4.875
–
–
3.8
5.0
16
8.0
–
5.075
50
50
–
V
mV
mV
mA
OSCILLATOR
Frequency
f OSC
kHz
T J = 25 ? C ( ? 5%)
T J = --40 ? C to 125 ? C ( ? 7.5%)
222
211.2
246
–
272.2
277.2
Peak Voltage ( ? 3%)
Valley Voltage ( ? 3%)
Discharge Current (V RTCT = 2.3 V)
Maximum Operating Frequency (Note 4)
Duty Cycle (R D = 25 k Ω )
Adjustable Maximum Duty Cycle (Note 4)
V RTCT(peak)
V RTCT(valley)
I RTCT
f MAX
D
D MAX
--
--
--
1.0
58.8
85
2.92
2.1
480
–
62.6
--
--
--
--
–
65
--
V
V
m A
MHz
%
%
4. Guaranteed by design only.
http://onsemi.com
6
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