参数资料
型号: NCP5422ADR2
厂商: ON Semiconductor
文件页数: 3/16页
文件大小: 0K
描述: IC REG CTRLR BUCK PWM 16-SOIC
产品变化通告: Product Obsolescence 11/Feb/2009
标准包装: 2,500
PWM 型: 电流/电压模式,V²?
输出数: 1
频率 - 最大: 750kHz
占空比: 100%
电源电压: 10.8 V ~ 13.2 V
降压:
升压:
回扫:
反相:
倍增器:
除法器:
Cuk:
隔离:
工作温度: 0°C ~ 70°C
封装/外壳: 16-SOIC(0.154",3.90mm 宽)
包装: 带卷 (TR)
其它名称: NCP5422ADR2OS
NCP5422A
ABSOLUTE MAXIMUM RATINGS
Operating Junction Temperature, T J
Storage Temperature Range, T S
ESD Susceptibility (Human Body Model)
Package Thermal Resistance, SO-16:
Junction-to-Case, R q JC
Junction-to-Ambient, R q JA
Rating
Value
150
-65 to +150
2.0
28
115
Unit
° C
° C
kV
° C/W
° C/W
Lead Temperature Soldering:
Reflow: (Note 1)
230 peak
° C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. 60 second maximum above 183 ° C.
ABSOLUTE MAXIMUM RATINGS
Pin Symbol
V CC
Pin Name
IC Power Input
V MAX
16 V
V MIN
-0.3 V
I SOURCE
N/A
I SINK
1.5 A peak
200 mA DC
COMP1, COMP2
Compensation Capacitor for
4.0 V
-0.3 V
1.0 mA
1.0 mA
Channel 1 or 2
V FB1 , V FB2
Voltage Feedback Input for
5.0 V
-0.3 V
1.0 mA
1.0 mA
Channel 1 or 2
BST
Power Input for GATE(H)1, 2
20 V
-0.3 V
N/A
1.5 A peak
200 mA DC
R OSC
GATE(H)1 , GATE(H)2
GATE(L)1 , GATE(L)2
GND
Oscillator Resistor
High-Side FET Driver
for Channel 1 or 2
Low-Side FET Driver for
Channel 1 or 2
Ground
4.0 V
20 V
16 V
0V
-0.3 V
-2.0 V for 100 ns
-0.3 V DC
-2.0 V for 100 ns
-0.3 V DC
0V
1.0 mA
1.5 A peak
200 mA DC
1.5 A peak
200 mA DC
1.5 A peak
1.0 mA
1.5 A peak
200 mA DC
1.5 A peak
200 mA DC
N/A
200 mA DC
IS+1, IS+2
Positive Current Sense for
6.0 V
-0.3 V
1.0 mA
1.0 mA
Channel 1 or 2
IS-1, IS-2
Negative Current Sense for
6.0 V
-0.3 V
1.0 mA
1.0 mA
Channel 1 or 2
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