参数资料
型号: NCV8855BMNR2G
厂商: ON Semiconductor
文件页数: 11/24页
文件大小: 0K
描述: IC REG QD BUCK/LINEAR 40QFN
标准包装: 1
拓扑: 降压(降压)(2),线性(LDO)(2)
功能: 汽车无线电设备和仪表板电源
输出数: 4
频率 - 开关: 170kHz
电压/电流 - 输出 1: 控制器
电压/电流 - 输出 2: 可调式,2.5A
电压/电流 - 输出 3: 控制器
带 LED 驱动器:
带监控器:
带序列发生器:
电源电压: 9 V ~ 18 V
工作温度: -40°C ~ 105°C
安装类型: 表面贴装
封装/外壳: 40-VFQFN 裸露焊盘
供应商设备封装: 40-QFN(6x6)
包装: 标准包装
其它名称: NCV8855BMNR2GOSDKR
NCV8855
ELECTRICAL CHARACTERISTICS (V IN_SW = V IN = V ISNS1+ = V ISNS1 ? = V ISNS2+ = V ISNS2 ? = 13.2 V, SYS_EN = LDO_EN =
HS_EN = 5 V, VOUT3 = 3.3 V, VOUT4 = 8.5 V, IOUT[1:4] = 0 A) Min/Max values are valid for the temperature range ? 40 ° C v T J v
150 ° C unless noted otherwise. Min/Max values are guaranteed by test, design or statistical correlation.
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
High ? side Load Switch (HSS)
MOSFET
HSS R DS(on)
HSS dropout voltage
V GS(HSS) = 8 V
I HS_S = 1 A
233
233
442
442
m W
mV
Turn On/Off
Turn on time (resistive load)
Turn off time
R HS_S = 6.6 W , 90% VIN
R HS_S = 6.6 W , 10% VIN
40
50
80
125
120
200
m s
m s
1. Guaranteed by design, not fully tested in production.
2. Indirectly guaranteed by test coverage of other parameters.
1.506 msec
3.012 m sec
V DS w 3.75 V
V HS_S
4.5V
V DS = 3.75V
I LOAD
2.8A
HS_EN
HS Current Overload
(Latched shutdown of HS only)
Figure 3.
http://onsemi.com
11
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