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参数资料
| 型号： | NT1GT64U8HA0B-3C |
| 厂商： | NANYA TECHNOLOGY CORP |
| 元件分类： | DRAM |
| 英文描述： | 128M X 64 DDR DRAM MODULE, 0.45 ns, DMA240 |
| 封装： | DIMM-240 |
| 文件页数： | 5/20页 |
| 文件大小： | 311K |
| 代理商： | NT1GT64U8HA0B-3C |
NT512T64U88A0F / NT512T64U88A0B / NT512T64U88A0BY (Green)
NT1GT64U8HA0F / NT1GT64U8HA0B / NT1GT64U8HA0BY (Green)
512MB: 64M x 64 / 1GB: 128M x 64
Unbuffered DDR2 SDRAM DIMM
REV 1.1
13
03/2005
NANYA TECHNOLOGY CORP.
NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.
DC Electrical Characteristics and Operating Conditions
(TA = 0 °C ~ 70 °C; VDDQ = 1.8V ± 0.1V; VDD = 1.8V ± 0.1V, See AC Characteristics)
Symbol
Parameter
Min
Max
Units
Notes
VDD
Supply Voltage
1.7
1.9
V
1
VDDQ
I/O Supply Voltage
1.7
1.9
V
1
VSS, VSSQ
Supply Voltage, I/O Supply Voltage
0
V
VREF
I/O Reference Voltage
0.49 x
VDDQ 0.51 x VDDQ
V
1, 2
VIH (DC)
Input High (Logic1) Voltage
VREF + 0.125
VDDQ + 0.3
V
1
VIL (DC)
Input Low (Logic0) Voltage
-0.3
VREF - 0.125
V
1
Note:
1.
Inputs are not recognized as valid until VREF stabilizes.
2.
VREF is expected to be equal to 0.5 VDDQ of the transmitting device, and to track variations in the DC level of the same.
Peak-to-peak noise on VREF may not exceed 2% of the DC value
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