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参数资料
| 型号： | NT1GT64U8HA0B-3C |
| 厂商： | NANYA TECHNOLOGY CORP |
| 元件分类： | DRAM |
| 英文描述： | 128M X 64 DDR DRAM MODULE, 0.45 ns, DMA240 |
| 封装： | DIMM-240 |
| 文件页数： | 9/20页 |
| 文件大小： | 311K |
| 代理商： | NT1GT64U8HA0B-3C |
NT512T64U88A0F / NT512T64U88A0B / NT512T64U88A0BY (Green)
NT1GT64U8HA0F / NT1GT64U8HA0B / NT1GT64U8HA0BY (Green)
512MB: 64M x 64 / 1GB: 128M x 64
Unbuffered DDR2 SDRAM DIMM
REV 1.1
17
03/2005
NANYA TECHNOLOGY CORP.
NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.
AC Timing Specifications for DDR2 SDRAM Devices Used on Module
(TA = 0 °C ~ 70 °C; VDDQ = 1.8V ± 0.1V; VDD = 1.8V ± 0.1V, See AC Characteristics) (Part 2 of 2)
-5A
-37B
-3C
Symbol
Parameter
Min.
Max.
Min.
Max.
Min.
Max.
Unit
tWR
Write recovery time
15
ns
tDAL
Auto precharge write recovery + precharge time
tWR+tRP
tCK
tWTR
Internal write to read command delay
10
7.5
tCK
tRTP
Internal read to precharge command delay
7.5
ns
tXSNR
Exit self refresh to a Non-read command
tRFC+10
ns
tXSRD
Exit self refresh to a Read command
200
tCK
tXP
Exit precharge power down to any Non- read
command
2
tCK
tXARD
Exit active power down to read command
2
tCK
tXARDS
Exit active power down to read command
6-AL
7-AL
tCK
tCKE
CKE minimum pulse width
3
tCK
tAOND
ODT turn-on delay
2
tCK
tAON
ODT turn-on
tAC (min)
tAC (max)
+1
tAC (min)
tAC (max)
+1
tAC (min)
tAC (max)
+0.7
tCK
tAONPD
ODT turn-on (Power down mode)
tAC (min)
+2
2tCK + tAC
(max)
+1
tAC (min)
+2
2tCK + tAC
(max)
+1
tAC (min)
+2
2tCK + tAC
(max)
+1
tCK
tAOFD
ODT turn-off delay
2.5
tCK
tAOF
ODT turn-off
tAC (min)
tAC (max)
+0.6
tAC (min)
tAC (max)
+0.6
tAC (min)
tAC (max)
+0.6
ns
tAOFPD
ODT turn-off (Power down mode)
tAC
(min)
+2
2.5tCK +
tAC
(max)
+1
tAC
(min)
+2
2.5tCK +
tAC
(max)
+1
tAC
(min)
+2
2.5tCK +
tAC
(max)
+1
ns
tANPD
ODT to power down entry latency
3
tCK
tAXPD
ODT power down exit latency
8
tCK
tOIT
OCD drive mode output delay
0
12
0
12
0
12
ns
tDelay
Minimum time clocks remains ON after CKE
asynchronously drops Low
tIS + tCK +
tIH
tIS + tCK +
tIH
tIS + tCK +
tIH
ns
tRCD
Active to Read or Write delay
15
12
ns
tRP
Precharge command period
15
12
ns
tREFI
Average Periodic Refresh Interval
7.8
us
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