- 您现在的位置：买卖IC网 > Datasheet目录488 > NTGD3133PT1G (ON Semiconductor)MOSFET P-CH DUAL 20V 21.5A 6TSOP Datasheet资料下载
参数资料
| 型号： | NTGD3133PT1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH DUAL 20V 21.5A 6TSOP |
| 产品变化通告： | Product Obsolescence 21/Jan/2010 |
| 标准包装： | 3,000 |
| FET 型： | 2 个 P 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 1.6A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 145 毫欧 @ 2.2A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 5.5nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 400pF @ 10V |
| 功率 - 最大： | 560mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SC-74，SOT-457 |
| 供应商设备封装： | 6-TSOP |
| 包装： | 带卷 (TR) |
NTGD3133P
THERMAL RESISTANCE RATINGS
Parameter
Junction ? to ? Ambient – Steady State (Note 3)
Junction ? to ? Ambient – t ≤ 5 s (Note 3)
Junction ? to ? Ambient – Steady State Min Pad (Note 4)
Symbol
R q JA
R q JA
R q JA
Max
115
95
225
Unit
° C/W
3. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces).
4. Surface Mounted on FR4 Board using the minimum recommended pad size (Cu area = 30 mm 2 [2 oz] including traces).
MOSFET ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise noted)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain ? to ? Source Breakdown Voltage
Drain ? to ? Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
V (BR)DSS
V (BR)DSS /T J
I DSS
V GS = 0 V
V GS = 0 V, V DS = ? 16 V
I D = ? 250 m A
T J = 25 ° C
T J = 85 ° C
? 20
?
?
?
?
14.2
?
?
?
?
? 1.0
? 10
V
mV/ ° C
m A
Gate ? to ? Source Leakage Current
I GSS
V DS = 0 V, V GS = ± 12 V
?
?
± 100
nA
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
V GS(TH)
V GS = V DS
I D = ? 250 m A
? 0.6
? 0.95
? 1.4
V
Drain ? to ? Source On Resistance
R DS(on)
V GS = ? 4.5 V, I D = ? 2.2 A
?
90
145
m W
V GS = ? 2.5 V, I D = ? 1.6 A
?
140
200
Forward Transconductance
g FS
V DS = ? 5.0 V, I D = ? 2.2 A
?
4.5
?
S
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C ISS
?
400
?
pF
Output Capacitance
Reverse Transfer Capacitance
C OSS
C RSS
V GS = 0 V, V DS = ? 10 V, f = 1.0 MHz
?
?
75
40
?
?
Total Gate Charge
Q G(TOT)
?
3.8
5.5
nC
Threshold Gate Charge
Gate ? to ? Source Charge
Gate ? to ? Drain Charge
Q G(TH)
Q GS
Q GD
V GS = ? 4.5 V, V DS = ? 10 V, I D = ? 2.2 A
?
?
?
0.5
0.9
1.0
?
?
?
SWITCHING CHARACTERISTICS (Note 6)
Turn ? On Delay Time
t d(ON)
?
6.7
?
ns
Rise Time
Turn ? Off Delay Time
Fall Time
t r
t d(OFF)
t f
V GS = ? 4.5 V, V DD = ? 10 V,
I D = ? 1.0 A, R G = 6.0 W
?
?
?
12.7
13.2
11
?
?
?
DRAIN ? SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
V SD
t RR
V GS = 0 V, T J = 25 ° C
I S = ? 0.8 A
?
?
? 0.8
12
? 1.2
?
V
ns
Charge Time
Discharge Time
t a
t b
V GS = 0 V,
dI SD / dt = 100 A/ m s, I S = ? 0.8 A
?
?
8.0
4.0
?
?
Reverse Recovery Charge
Q RR
?
4.0
?
nC
5. Pulse Test: pulse width v 300 m s, duty cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
http://onsemi.com
2
相关PDF资料 |
PDF描述 |
|---|---|
| NTGD3147FT1G | MOSFET P-CH 20V 2.2A 6-TSOP |
| NTGD3148NT1G | MOSFET N-CH DUAL 20V 3.5A 6TSOP |
| NTGD3149CT1G | MOSFET COMPL 20V DUAL 6-TSOP |
| NTGD4161PT1G | MOSFET P-CH DUAL 30V 2.3A 6-TSOP |
| NTGD4167CT1G | MOSFET N/P-CH 30V DUAL 6-TSOP |
相关代理商/技术参数 |
参数描述 |
|---|---|
| NTGD3133PT1H | 制造商:Rochester Electronics LLC 功能描述: 制造商:ON Semiconductor 功能描述: |
| NTGD3147F | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET and Schottky Diode−20 V, −2.5 A, P−Channel with Schottky Barrier Diode, TSOP−6 |
| NTGD3147FT1G | 功能描述:MOSFET FETKY 20V 2.5A 145M TSOP6 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTGD3148 | 制造商:ON Semiconductor 功能描述:MOSFET NN CH 20V 3.5A 6TSOP 制造商:ON Semiconductor 功能描述:MOSFET, NN CH, 20V, 3.5A, 6TSOP |
| NTGD3148N | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 20 V, 3.5 A, Dual N-Channel, TSOP-6 |
发布紧急采购，3分钟左右您将得到回复。