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| 型号： | NTLUS4195PZTBG |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 30V 3A SGL 6UDFN |
| 产品变化通告： | Product Obsolescence 05/Oct/2010 |
| 标准包装： | 3,000 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 2A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 90 毫欧 @ 3A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 5nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 250pF @ 15V |
| 功率 - 最大： | 600mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-UFDFN 裸露焊盘 |
| 供应商设备封装： | 6-UDFN（1.6x1.6） |
| 包装： | 带卷 (TR) |
NTLUS4195PZ
Power MOSFET
? 30 V, ? 4.0 A, m Cool t Single P ? Channel,
ESD, 1.6x1.6x0.55 mm UDFN Package
Features
? UDFN Package with Exposed Drain Pads for Excellent Thermal
Conduction
? Low Profile UDFN 1.6 x 1.6 x 0.55 mm for Board Space Saving
? Lowest R DS(on) in 1.6x1.6 Package
? ESD Protected
? This is a Halide Free Device
? This is a Pb ? Free Device
Applications
? High Side Load Switch
? PA Switch and Battery Switch
? Optimized for Power Management Applications for Portable
Products, such as Cell Phones, PMP, DSC, GPS, and others
V (BR)DSS
? 30 V
http://onsemi.com
MOSFET
R DS(on) MAX
90 m W @ ? 10 V
155 m W @ ? 4.5 V
S
G
I D MAX
? 3.0 A
? 2.0 A
MAXIMUM RATINGS (T J = 25 ° C unless otherwise stated)
Parameter
Symbol
Value
Units
Drain-to-Source Voltage
Gate-to-Source Voltage
V DSS
V GS
? 30
± 20
V
V
D
P ? Channel MOSFET
Continuous Drain
Current (Note 1)
Steady
State
T A = 25 ° C
T A = 85 ° C
I D
? 3.0
? 2.3
A
MARKING
DIAGRAM
Power Dissipation
(Note 1)
t ≤ 5s
Steady
State
T A = 25 ° C
T A = 25 ° C
P D
? 4.0
1.5
W
1
6
UDFN6
CASE 517AU
m COOL t
1
AC M G
G
t ≤ 5s
T A = 25 ° C
2.3
AC = Specific Device Code
Continuous Drain
Current (Note 2)
Steady
State
T A = 25 ° C
T A = 85 ° C
I D
? 2.0
? 1.5
A
M = Date Code
G = Pb ? Free Package
(Note: Microdot may be in either location)
Power Dissipation (Note 2)
Pulsed Drain Current
T A = 25 ° C
tp = 10 m s
P D
I DM
0.6
? 17
W
A
Operating Junction and Storage
Temperature
Source Current (Body Diode) (Note 2)
Lead Temperature for Soldering Purposes
(1/8 ″ from case for 10 s)
T J ,
T STG
I S
T L
-55 to
150
? 1.0
260
° C
A
° C
Gate-to-Source ESD Rating
(HBM) per JESD22 ? A114F
ESD
Class 1B
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq
[2 oz] including traces).
2. Surface-mounted on FR4 board using the minimum recommended pad size
of 30 mm 2 , 2 oz. Cu.
(Top View)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
? Semiconductor Components Industries, LLC, 2009
June, 2009 ? Rev. 0
1
Publication Order Number:
NTLUS4195PZ/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTLUS4930N | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 30 V, 6.1 A, Single Na??Channel, 2.0x2.0x0.55 mm Cool UDFN6 Package |
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| NTLUS4930NTBG | 制造商:ON Semiconductor 功能描述:NFET UDFN6 30V 6.3A 26.3M - Tape and Reel |
| NTLUS4C12N | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET |
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