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| 型号： | NTMD2P01R2G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET PWR P-CHAN DUAL 16V 8SOIC |
| 产品变化通告： | Wire Change 20/Aug/2008 Product Obsolescence 07/Jul/2010 |
| 标准包装： | 2,500 |
| FET 型： | 2 个 P 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 16V |
| 电流 - 连续漏极(Id) @ 25° C： | 2.3A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 100 毫欧 @ 2.4A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 18nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 750pF @ 16V |
| 功率 - 最大： | 710mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 带卷 (TR) |
| 其它名称： | NTMD2P01R2GOS |
NTMD2P01R2
Power MOSFET
?2.3 Amps, ?16 Volts
Dual SOIC ? 8 Package
Features
? High Efficiency Components in a Single SOIC ? 8 Package
? High Density Power MOSFET with Low R DS(on)
? Logic Level Gate Drive
? SOIC ? 8 Surface Mount Package,
Mounting Information for SOIC ? 8 Package Provided
? Pb ? Free Packages are Available
Applications
? Power Management in Portable and Battery ? Powered Products, i.e.:
Computers, Printers, PCMCIA Cards, Cellular and Cordless Telephones
V DSS
? 16 V
http://onsemi.com
R DS(ON) Typ
100 m W @ ? 4.5 V
P ? Channel
D
I D Max
? 2.3 A
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
Rating Symbol
Value
Unit
G
Drain ? to ? Source Voltage
V DSS
? 16
V
S
Gate ? to ? Source Voltage ? Continuous
Thermal Resistance ? Junction ? to ? Ambient
(Note 1)
Total Power Dissipation @ T A = 25 ° C
Continuous Drain Current @ T A = 25 ° C
Continuous Drain Current @ T A = 100 ° C
Pulsed Drain Current (Note 4)
Thermal Resistance ? Junction ? to ? Ambient
(Note 2)
Total Power Dissipation @ T A = 25 ° C
Continuous Drain Current @ T A = 25 ° C
Continuous Drain Current @ T A = 100 ° C
Pulsed Drain Current (Note 4)
V GS
R q JA
P D
I D
I D
I DM
R q JA
P D
I D
I D
I DM
" 10
175
0.71
? 2.3
? 1.45
? 9.0
105
1.19
? 2.97
? 1.88
? 12
V
° C/W
W
A
A
A
° C/W
W
A
A
A
8
1
SOIC ? 8
SUFFIX NB
CASE 751
STYLE 11
MARKING DIAGRAM *
AND PIN ASSIGNMENT
D1 D1 D2 D2
8
ED2P01
AYWW G
G
1
S1 G1 S2 G2
Thermal Resistance ? Junction ? to ? Ambient
(Note 3)
Total Power Dissipation @ T A = 25 ° C
Continuous Drain Current @ T A = 25 ° C
Continuous Drain Current @ T A = 100 ° C
Pulsed Drain Current (Note 4)
Operating and Storage
Temperature Range
Single Pulse Drain ? to ? Source Avalanche
Energy ? Starting T J = 25 ° C
(V DD = ? 16 Vdc, V GS = ? 4.5 Vdc, Peak I L
= ? 5.0 Apk, L = 28 mH, R G = 25 W )
Maximum Lead Temperature for Soldering
Purposes, 1/8 ″ from case for 10 seconds
R q JA
P D
I D
I D
I DM
T J , T stg
E AS
T L
62.5
2.0
? 3.85
? 2.43
? 15
? 55 to
+150
350
260
° C/W
W
A
A
A
° C
mJ
° C
ED2P01= Specific Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb ? Free Package
(Note: Microdot may be in either location)
*For additional marking information, refer to
Application Note AND8002/D.
ORDERING INFORMATION
Device Package Shipping ?
NTMD2P01R2 SOIC ? 8 2500/Tape & Reel
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Minimum FR ? 4 or G ? 10 PCB, Steady State.
2. Mounted onto a 2 ″ square FR ? 4 Board (1 in sq, 2 oz Cu 0.06 ″ thick
single sided), Steady State.
3. Mounted onto a 2 ″ square FR ? 4 Board (1 in sq, 2 oz Cu 0.06 ″ thick
single sided), t ≤ 10 seconds.
4. Pulse Test: Pulse Width = 300 m s, Duty Cycle = 2%.
NTMD2P01R2G SOIC ? 8 2500/Tape & Reel
(Pb ? Free)
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D
? Semiconductor Components Industries, LLC, 2006
February, 2006 ? Rev. 2
1
Publication Order Number:
NTMD2P01R2/D
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相关代理商/技术参数 |
参数描述 |
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| NTMD3N08 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | 80V V(BR)DSS | SO |
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| NTMD3N08LR2 | 功能描述:MOSFET 80V 2.3A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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