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参数资料
| 型号： | NTLUS4195PZTBG |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 30V 3A SGL 6UDFN |
| 产品变化通告： | Product Obsolescence 05/Oct/2010 |
| 标准包装： | 3,000 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 2A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 90 毫欧 @ 3A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 5nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 250pF @ 15V |
| 功率 - 最大： | 600mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-UFDFN 裸露焊盘 |
| 供应商设备封装： | 6-UDFN（1.6x1.6） |
| 包装： | 带卷 (TR) |
NTLUS4195PZ
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient – Steady State (Note 3)
Junction-to-Ambient – t ≤ 5 s (Note 3)
Junction-to-Ambient – Steady State min Pad (Note 4)
Symbol
R θJA
R θJA
R θJA
Max
85
55
200
Units
° C/W
ELECTRICAL CHARACTERISTIC S (T J = 25 ° C unles s otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Units
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
Drain-to-Source Breakdown Voltage
Temperature Coefficient
V (BR)DSS
V (BR)DSS /T J
V GS = 0 V, I D = ? 250 m A
I D = ? 250 m A, ref to 25 ° C
? 30
28
V
mV/ ° C
Zero Gate Voltage Drain Current
I DSS
V GS = 0 V,
V DS = ? 30 V
T J = 25 ° C
T J = 85 ° C
? 1.0
? 10
m A
Gate-to-Source Leakage Current
I GSS
V DS = 0 V, V GS = ± 20 V
10
m A
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Negative Threshold Temp. Coefficient
V GS(TH)
V GS(TH) /T J
V GS = V DS , I D = ? 250 m A
? 1.0
3.8
? 3.0
V
mV/ ° C
Drain-to-Source On Resistance
R DS(on)
V GS = ? 10 V, I D = ? 3.0 A
75
90
m W
V GS = ? 4.5 V, I D = ? 2.0 A
120
155
Forward Transconductance
g FS
V DS = ? 5.0 V, I D = ? 0.2 A
1.3
S
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C ISS
C OSS
C RSS
V GS = 0 V, f = 1 MHz,
V DS = ? 15 V
250
60
40
pF
Total Gate Charge
Threshold Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Q G(TOT)
Q G(TH)
Q GS
Q GD
V GS = ? 4.5 V, V DS = ? 15 V;
ID = ? 3.0 A
3.2
0.2
1.0
1.5
5.0
nC
SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 6)
Turn-On Delay Time
t d(ON)
30
ns
Rise Time
Turn-Off Delay Time
Fall Time
t r
t d(OFF)
t f
V GS = ? 4.5 V, V DD = ? 15 V,
I D = ? 3.0 A, R G = 1 W
95
50
70
DRAIN-SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
VSD
V GS = 0 V,
I S = ? 1.0 A
T J = 25 ° C
T J = 85 ° C
0.8
0.7
1.2
V
Reverse Recovery Time
t RR
11
ns
Charge Time
Discharge Time
t a
t b
V GS = 0 V, dISD/dt = 100 A/ m s,
I S = ? 1.0 A
7.5
3.5
Reverse Recovery Charge
Q RR
5.0
nC
3.
4.
5.
6.
Surface-mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces).
Surface-mounted on FR4 board using the minimum recommended pad size of 30 mm 2 , 1 oz. Cu.
Pulse Test: pulse width ≤ 300 m s, duty cycle ≤ 2%.
Switching characteristics are independent of operating junction temperatures.
http://onsemi.com
2
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