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参数资料
| 型号： | NTMD5836NLR2G |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/10页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 40V 11A SO-8FL |
| 标准包装： | 1 |
| FET 型： | 2 个 N 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 40V |
| 电流 - 连续漏极(Id) @ 25° C： | 9A，5.7A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 12 毫欧 @ 10A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 50nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 2120pF @ 20V |
| 功率 - 最大： | 1.5W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 标准包装 |
| 其它名称： | NTMD5836NLR2GOSDKR |
NTMD5836NL
MAXIMUM RATINGS (T J = 25 ° C unless otherwise stated)
Drain ? to ? Source Voltage
Gate ? to ? Source Voltage
Parameter
Symbol
V DSS
V GS
Ch 1
40
$ 20
Ch 2
40
$ 20
Unit
V
V
Continuous Drain Current R θJA (Notes 3 and 4)
Power Dissipation R θJA (Notes 3 and 4)
Steady
State
T A = 25 ° C
T A = 70 ° C
T A = 25 ° C
I D
P D
9.0
7.2
1.5
5.7
4.6
1.5
A
W
T A = 70 ° C
0.9
0.9
Continuous Drain Current R θJA (Notes 3 and 4)
t v 10s
T A = 25 ° C
I D
11
6.5
A
T A = 70 ° C
8.6
4.6
Power Dissipation R θJA (Notes 3 and 4)
T A = 25 ° C
P D
2.1
1.9
W
T A = 70 ° C
1.3
1.2
Pulsed Drain Current
t p = 10 m s
I DM
43
26
A
Operating Junction and Storage Temperature
T J , T STG
? 55 to +150
° C
Source Current (Body Diode)
Single Pulse Drain ? to ? Source Avalanche Energy (V DD = 40 V, V GS = 10 V, L = 0.1 mH )
Lead Temperature for Soldering Purposes (1/8” from case for 10s)
I S
E AS
I AS
T L
10
76
39
260
7.0
22
21
A
mJ
A
° C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
3. Surface ? mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces)
4. Only selected channel is been powered
1W applied on channel 1: T J = 1 W * 85 ° C/W + 25 ° C = 110 ° C
THERMAL RESISTANCE RATINGS
Parameter
Junction ? to ? Ambient Steady State (Notes 5 and 7)
Junction ? to ? Ambient – t v 10 s (Notes 5 and 7)
Junction ? to ? Ambient Steady State (Notes 5 and 8)
Junction ? to ? Ambient Steady State (Notes 6 and 7)
Symbol
R θJA
R θJA
R θJA
R θJA
Ch 1
85
60
136
59
Ch 2
86
65
136
Unit
° C/W
5. Surface ? mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces)
6. Surface ? mounted on FR4 board using 0.155 in sq (100 mm 2 ) pad size
7. Only selected channel is been powered
1W applied on channel 1: T J = 1 W * 85 ° C/W + 25 ° C = 110 ° C
8. Both channels receive equivalent power dissipation
1 W applied on each channel: T J = 2 W * 59 ° C/W + 25 ° C = 143 ° C
http://onsemi.com
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