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| 型号： | NTMFD4901NFT1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 12/12页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH DUAL 30V 8DFN |
| 标准包装： | 1,500 |
| FET 型： | 2 个 N 通道（双），肖特基 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 13.5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 6.5 毫欧 @ 10A，10V |
| Id 时的 Vgs(th)（最大）： | 2.2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 9.7nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 1150pF @ 15V |
| 功率 - 最大： | 1.1W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-PowerTDFN |
| 供应商设备封装： | 8-DFN（5x6） |
| 包装： | 带卷 (TR) |
NTMFD4901NF
PACKAGE DIMENSIONS
DFN8 5x6, 1.27P Dual Flag (SO8FL?Dual?Asymmetrical)
CASE 506BX
ISSUE C
2X
0.20 C
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
D
A
3. DIMENSIONS b AND b1 APPLY TO PLATED FEATURES AND ARE
MEASURED BETWEEN 0.15 AND 0.25 MM FROM TERMINAL TIPS.
8
7
D1
6
5
B
2X
0.20 C
4. COPLANARITY APPLIES TO THE EXPOSED PADS AS WELL AS THE
TERMINALS.
5. DIMENSIONS D1 AND E1 DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
6. SEATING PLANE IS DEFINED BY THE TERMINALS. A1 IS DEFINED
AS THE DISTANCE FROM THE SEATING PLANE TO THE LOWEST
POINT ON THE PACKAGE BODY.
PIN ONE
IDENTIFIER
E1 E
4X
h
DIM
A
A1
MILLIMETERS
MIN MAX
0.90 1.10
0.00
0.05
1
2
3
4
c
A1
b
b1
c
0.41
0.41
0.23
0.61
0.61
0.33
0.10 C
TOP VIEW
D
D1
D2
E
5.15 BSC
4.50 5.10
3.50 4.22
6.15 BSC
0.10 C
A
DETAIL A
E1
E2
E3
5.50
2.27
0.82
6.10
2.67
1.22
12 _
NOTE 4
SIDE VIEW
e
C
DETAIL A
SEATING
PLANE
NOTE 6
e
G
G1
h
L
1.27 BSC
0.63 BSC
1.72 BSC
???
0.35 0.55
L
e/2
DETAIL B
8X
b
0.10
C A B
1
4
E3
0.05
C
NOTE 3
RECOMMENDED
0.10
SOLDERING FOOTPRINT*
G1
G
E2
REF
DETAIL B
PACKAGE
OUTLINE
5.35
8X
0.64
4X
0.69
0.10 C A B
DETAIL C
8
D2
5
0.10 C A B
6X b1
NOTE 3
DETAIL C
6.48
1.97
2.68
BOTTOM VIEW
2.23
1.22
4X
0.69
1.27
PITCH
DIMENSION: MILLIMETERS
*For additional information on our Pb?Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
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12
ON Semiconductor Website : www.onsemi.com
Order Literature : http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
NTMFD4901NF/D
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| NTMFD4901NFT3G | 功能描述:MOSFET N-CH DUAL 30V 8DFN RoHS:是 类别:分离式半导体产品 >> FET - 阵列 系列:- 产品目录绘图:8-SOIC Mosfet Package 标准包装:1 系列:- FET 型:2 个 N 沟道（双） FET 特点:逻辑电平门 漏极至源极电压(Vdss):60V 电流 - 连续漏极(Id) @ 25° C:3A 开态Rds（最大）@ Id, Vgs @ 25° C:75 毫欧 @ 4.6A，10V Id 时的 Vgs(th)（最大）:3V @ 250µA 闸电荷(Qg) @ Vgs:20nC @ 10V 输入电容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安装类型:表面贴装 封装/外壳:PowerPAK? SO-8 供应商设备封装:PowerPAK? SO-8 包装:Digi-Reel® 产品目录页面:1664 (CN2011-ZH PDF) 其它名称:SI7948DP-T1-GE3DKR |
| NTMFD4902NFT1G | 功能描述:MOSFET NFET SO8FL 30V 10.8A 7MO RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTMFD4902NFT3G | 功能描述:MOSFET N-CH DUAL 30V 8DFN RoHS:是 类别:分离式半导体产品 >> FET - 阵列 系列:- 产品目录绘图:8-SOIC Mosfet Package 标准包装:1 系列:- FET 型:2 个 N 沟道（双） FET 特点:逻辑电平门 漏极至源极电压(Vdss):60V 电流 - 连续漏极(Id) @ 25° C:3A 开态Rds（最大）@ Id, Vgs @ 25° C:75 毫欧 @ 4.6A，10V Id 时的 Vgs(th)（最大）:3V @ 250µA 闸电荷(Qg) @ Vgs:20nC @ 10V 输入电容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安装类型:表面贴装 封装/外壳:PowerPAK? SO-8 供应商设备封装:PowerPAK? SO-8 包装:Digi-Reel® 产品目录页面:1664 (CN2011-ZH PDF) 其它名称:SI7948DP-T1-GE3DKR |
| NTMFD4952NFT1G | 制造商:ON Semiconductor 功能描述:NFET SO8FL 30V 10.8A 7MO - Tape and Reel |
| NTMFD4952NFT3G | 制造商:ON Semiconductor 功能描述:NFET SO8FL 30V 10.8A 7MO - Tape and Reel |
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