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| 型号： | NVF2955PT1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET P CH 60V 1.7A SOT223 |
| 标准包装： | 1,000 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 1.7A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 185 毫欧 @ 2.4A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 1mA |
| 闸电荷(Qg) @ Vgs： | 14.3nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 492pF @ 25V |
| 功率 - 最大： | 2.3W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-261-4，TO-261AA |
| 供应商设备封装： | SOT-223 |
| 包装： | 带卷 (TR) |
NTF2955, NVF2955
ELECTRICAL CHARACTERISTICS (T J =25 ° C unless otherwise stated)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain ? to ? Source Breakdown Voltage
Drain ? to ? Source Breakdown Voltage
Temperature Coefficient
V (BR)DSS
V (BR)DSS /T J
V GS = 0 V, I D = ? 250 m A
? 60
66.4
V
mV/ ° C
Zero Gate Voltage Drain Current
I DSS
V GS = 0 V,
V DS = ? 60 V
T J = 25 ° C
T J = 125 ° C
? 1.0
? 50
m A
Gate ? to ? Source Leakage Current
I GSS
V DS = 0 V, V GS = ± 20 V
± 100
nA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Drain ? to ? Source On Resistance
V GS(TH)
R DS(on)
V GS = V DS , I D = ? 1.0 mA
V GS = ? 10 V, I D = ? 0.75 A
? 2.0
145
? 4.0
170
V
m W
V GS = ? 10 V, I D = ? 1.5 A
V GS = ? 10 V, I D = ? 2.4 A
150
154
180
185
Forward Transconductance
g FS
V GS = ? 15 V, I D = ? 0.75 A
1.77
S
CHARGES AND CAPACITANCES
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate ? to ? Source Charge
Gate ? to ? Drain Charge
C ISS
C OSS
C RSS
Q G(TOT)
Q G(TH)
Q GS
Q GD
V GS = 0 V, f = 1.0 MHz,
V DS = 25 V
V GS = 10 V, V DS = 30 V,
I D = 1.5 A
492
165
50
14.3
1.2
2.3
5.2
pF
nC
SWITCHING CHARACTERISTICS (Note 4)
Turn ? On Delay Time
Rise Time
Turn ? Off Delay Time
Fall Time
t d(ON)
t r
t d(OFF)
t f
V GS = 10 V, V DD = 25 V,
I D = 1.5 A, R G = 9.1 W
R L = 25 W
11
7.6
65
38
ns
DRAIN ? SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V SD
V GS = 0 V,
I S = 1.5 A
T J = 25 ° C
T J = 125 ° C
? 1.10
? 0.9
? 1.30
V
Reverse Recovery Time
t RR
36
Charge Time
Discharge Time
Reverse Recovery Charge
t a
t b
Q RR
V GS = 0 V, dI S /dt = 100 A/ m s,
I S = 1.5 A
20
16
0.139
ns
nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: pulse width ≤ 300 m s, duty cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperatures.
http://onsemi.com
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NVF2955T1G | 功能描述:MOSFET P-CH 60V 2.6A SOT223 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| NVF3055-100T1G | 功能描述:MOSFET NFET 60V 3A 0.100R RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NVF3055L108T1G | 功能描述:MOSFET NFET 60V 3A 0.120R RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NVF3055L108T3G | 功能描述:MOSFET NFET 60V 3A 0.120R RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NVF4-1 | 制造商:DBLECTRO 制造商全称:DB Lectro Inc 功能描述:NHG RELAYS |
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