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参数资料
| 型号： | NVF2955PT1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 6/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET P CH 60V 1.7A SOT223 |
| 标准包装： | 1,000 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 1.7A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 185 毫欧 @ 2.4A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 1mA |
| 闸电荷(Qg) @ Vgs： | 14.3nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 492pF @ 25V |
| 功率 - 最大： | 2.3W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-261-4，TO-261AA |
| 供应商设备封装： | SOT-223 |
| 包装： | 带卷 (TR) |
NTF2955, NVF2955
PACKAGE DIMENSIONS
D
b1
SOT ? 223 (TO ? 261)
CASE 318E ? 04
ISSUE N
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCH.
H E
e1
1
e
4
2
3
E
b
DIM
A
A1
b
b1
c
D
E
e
e1
MIN
1.50
0.02
0.60
2.90
0.24
6.30
3.30
2.20
0.85
MILLIMETERS
NOM MAX
1.63 1.75
0.06 0.10
0.75 0.89
3.06 3.20
0.29 0.35
6.50 6.70
3.50 3.70
2.30 2.40
0.94 1.05
MIN
0.060
0.001
0.024
0.115
0.009
0.249
0.130
0.087
0.033
INCHES
NOM
0.064
0.002
0.030
0.121
0.012
0.256
0.138
0.091
0.037
MAX
0.068
0.004
0.035
0.126
0.014
0.263
0.145
0.094
0.041
A
q
C
L
L1
H E
q
0.20
1.50
6.70
0 °
??? ???
1.75 2.00
7.00 7.30
? 1 0 °
0.008
0.060
0.264
0 °
???
0.069
0.276
?
???
0.078
0.287
1 0 °
0.08 (0003)
A1
L
L1
STYLE 3:
PIN 1.
2.
GATE
DRAIN
SOLDERING FOOTPRINT*
3.8
0.15
2.0
0.079
3.
4.
SOURCE
DRAIN
2.0
0.079
1.5
0.059
2.3
0.091
2.3
0.091
SCALE 6:1
6.3
0.248
mm
inches
*For additional information on our Pb ? Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent ? Marking.pdf. SCILLC
reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC
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any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture
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NTF2955/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NVF2955T1G | 功能描述:MOSFET P-CH 60V 2.6A SOT223 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| NVF3055-100T1G | 功能描述:MOSFET NFET 60V 3A 0.100R RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NVF3055L108T1G | 功能描述:MOSFET NFET 60V 3A 0.120R RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NVF3055L108T3G | 功能描述:MOSFET NFET 60V 3A 0.120R RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NVF4-1 | 制造商:DBLECTRO 制造商全称:DB Lectro Inc 功能描述:NHG RELAYS |
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