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| 型号： | OR4E042BM416-DB |
| 厂商： | LATTICE SEMICONDUCTOR CORP |
| 元件分类： | FPGA |
| 英文描述： | FPGA, 1296 CLBS, 380000 GATES, PBGA416 |
| 封装： | PLASTIC, FBGA-416 |
| 文件页数： | 63/151页 |
| 文件大小： | 2680K |
| 代理商： | OR4E042BM416-DB |
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Lattice Semiconductor
19
Data Sheet
September, 2002
ORCA Series 4 FPGAs
Programmable Logic Cells (continued)
The PFU memory mode uses all LUTs and latches/FFs
including the ninth FF in its implementation as shown in
F5[A:D] inputs where KZ[0] is the LSB and F5[A:D] is
the MSB, and the write address is input on CIN (MSB)
and DIN[7, 5, 3, 1], with DIN[1] being the LSB. Write
data is input on DIN[6, 4, 2, 0], where DIN[6] is the
MSB, and read data is available combinatorially on
F[6, 4, 2, 0] and registered on Q[6, 4, 2, 0] with F[6] and
Q[6] being the MSB. The write enable controlling ports
are input on CE0, CE1, and LSR0. CE1 is the active-
high write enable (CE1 = 1, RAM is write enabled). The
rst write port is enabled by CE0. The second write
port is enabled with LSR0. The PFU CLK (CLK0) signal
is used to synchronously write the data. The polarities
of the clock, write enable, and port enables are all pro-
grammable. Write-port enables may be disabled if they
are not to be used.
Data is written to the write data, write address, and
write enable registers on the active edge of the clock,
but data is not written into the RAM until the next clock
edge one-half cycle later. The read port is actually
asynchronous, providing the user with read data very
quickly after setting the read address, but timing is also
provided so that the read port may be treated as fully
synchronous for write then read applications. If the
read and write address lines are tied together (main-
taining MSB to MSB, etc.), then the dual-port RAM
operates as a synchronous single-port RAM. If the
write enable is disabled, and an initial memory contents
is provided at conguration time, the memory acts as a
ROM (the write data and write address ports and write
port enables are not used).
Wider memories can be created by operating two or
more memory mode PFUs in parallel, all with the same
address and control signals, but each with a different
nibble of data. To increase memory word depth above
32, two or more PLCs can be used. Figure 10 shows a
128x8 dual-port RAM that is implemented in eight
PLCs. This gure demonstrates data path width expan-
sion by placing two memories in parallel to achieve an
8-bit data path. Depth expansion is applied to achieve
128 words deep using the 32-word deep PFU memo-
ries. In addition to the PFU in each PLC, the SLIC
(described in the next section) in each PLC is used for
read address decodes and 3-state drivers. The 128x8
RAM shown could be made to operate as a single-port
RAM by tying (bit-for-bit) the read and write addresses.
To achieve depth expansion, one or two of the write
address bits (generally the MSBs) are routed to the
write port enables as in Figure 10. For 2 bits, the bits
select which 32-word bank of RAM of the four available
from a decode of two WPE inputs is to be written. Simi-
larly, 2 bits of the read address are decoded in the
SLIC and are used to control the 3-state buffers
through which the read data passes. The write data bus
is common, with separate nibbles for width expansion,
across all PLCs, and the read data bus is common
(again, with separate nibbles) to all PLCs at the output
of the 3-state buffers.
Figure 13 also shows the capability to provide a read
enable for RAMs/ROMs using the SLIC cell. The read
enable will 3-state the read data bus when inactive,
allowing the write data and read data buses to be tied
together if desired.
相关PDF资料 |
PDF描述 |
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| OR4E042BM680-DB | FPGA, 1296 CLBS, 380000 GATES, PBGA680 |
| OR4E043BA352-DB | FPGA, 1296 CLBS, 380000 GATES, PBGA352 |
| OR4E043BM416-DB | FPGA, 1296 CLBS, 380000 GATES, PBGA416 |
| OR4E043BM680-DB | FPGA, 1296 CLBS, 380000 GATES, PBGA680 |
| OR4E061BA352-DB | FPGA, 2024 CLBS, 515000 GATES, PBGA352 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| OR4E04-2BM416I | 功能描述:FPGA - 现场可编程门阵列 10368 LUT 466 I/O RoHS:否 制造商:Altera Corporation 系列:Cyclone V E 栅极数量: 逻辑块数量:943 内嵌式块RAM - EBR:1956 kbit 输入/输出端数量:128 最大工作频率:800 MHz 工作电源电压:1.1 V 最大工作温度:+ 70 C 安装风格:SMD/SMT 封装 / 箱体:FBGA-256 |
| OR4E04-2BM680C | 功能描述:FPGA - 现场可编程门阵列 10368 LUT 466 I/O RoHS:否 制造商:Altera Corporation 系列:Cyclone V E 栅极数量: 逻辑块数量:943 内嵌式块RAM - EBR:1956 kbit 输入/输出端数量:128 最大工作频率:800 MHz 工作电源电压:1.1 V 最大工作温度:+ 70 C 安装风格:SMD/SMT 封装 / 箱体:FBGA-256 |
| OR4E04-2BM680I | 功能描述:FPGA - 现场可编程门阵列 10368 LUT 466 I/O RoHS:否 制造商:Altera Corporation 系列:Cyclone V E 栅极数量: 逻辑块数量:943 内嵌式块RAM - EBR:1956 kbit 输入/输出端数量:128 最大工作频率:800 MHz 工作电源电压:1.1 V 最大工作温度:+ 70 C 安装风格:SMD/SMT 封装 / 箱体:FBGA-256 |
| OR4E04-3BA352C | 功能描述:FPGA - 现场可编程门阵列 10368 LUT 466 I/O RoHS:否 制造商:Altera Corporation 系列:Cyclone V E 栅极数量: 逻辑块数量:943 内嵌式块RAM - EBR:1956 kbit 输入/输出端数量:128 最大工作频率:800 MHz 工作电源电压:1.1 V 最大工作温度:+ 70 C 安装风格:SMD/SMT 封装 / 箱体:FBGA-256 |
| OR4E04-3BM416C | 功能描述:FPGA - 现场可编程门阵列 10368 LUT 466 I/O RoHS:否 制造商:Altera Corporation 系列:Cyclone V E 栅极数量: 逻辑块数量:943 内嵌式块RAM - EBR:1956 kbit 输入/输出端数量:128 最大工作频率:800 MHz 工作电源电压:1.1 V 最大工作温度:+ 70 C 安装风格:SMD/SMT 封装 / 箱体:FBGA-256 |
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