参数资料
型号: PF38F1020WYTQ1
厂商: INTEL CORP
元件分类: 存储器
英文描述: SPECIALTY MEMORY CIRCUIT, PBGA88
封装: 8 X 10 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, SCSP-88
文件页数: 3/23页
文件大小: 364K
代理商: PF38F1020WYTQ1
32-Mbit W18 + 8-Mbit SRAM (38F1020W0YTQ1, 38F1020W0YBQ1)
Datasheet
Intel StrataFlash Wireless Memory (W18 SCSP)
28 Jun 2005
Order Number: 252635, Revision: 003
11
5.0
Maximum Ratings and Operating Conditions
5.1
Absolute Maximum Ratings
Absolute maximum ratings for the 38F1020W0YQ1 devices are shown in Table 2.
Warning:
Stressing the device beyond the Absolute Maximum Ratings in Table 2 might cause permanent
damage. These are stress ratings only. Extended operation beyond the Operating Conditions in
Table 3 might affect device reliability.
5.2
Operating Conditions
NOTICE: This document contains information available at the time of its release. The specifications are subject to
change without notice. Verify with your local Intel Sales office that you have the latest datasheet before finalizing a
design
.
Table 2.
Absolute Maximum Ratings
Parameter
Maximum Ratings
Unit
Notes
Min
Max
Temperature under Bias Expanded
–25
+85
°C
Storage Temperature
–65
+125
°C
Voltage On Any Signal (except VCC, VCCQ, VPP and S-VCC)
–0.5
+2.45
V
1
VCC Voltage
–0.2
+2.45
V
1
VCCQ and S-VCC Voltage
–0.2
+2.45
V
1
VPP Voltage
–0.2
+14
V
1,2
Output Short Circuit Current
100
mA
3
Notes:
1.
Specified voltages are with respect to VSS. Minimum DC voltage is –0.5 V on inputs and I/Os, and
–0.2 V on VCC, VCCQ, VPP and S-VCC supplies. During transitions, this level might undershoot to –
2.0 V for periods < 20 ns. During transitions, the maximum DC voltage level might overshoot to VCC
+ 2.0 V for periods < 20 ns.
2.
VPP program voltage is typically VPP1. Maximum DC voltage on VPP might overshoot to +14 V for
periods < 20 ns. VPP can be VPP2 for 1000 erase cycles on main blocks, 2500 cycles on parameter
blocks.
3.
Output shorted for no more than one second. No more than one output shorted at a time.
Table 3.
Temperature and Voltage Operating Conditions (Sheet 1 of 2)
Symbol
Parameter
Min
Max
Unit
Test Condition
TA
Operating Temperature
–25
+85
°C
Ambient Temperature
VCC
Flash Memory Supply Voltage
1.7
1.95
V
VCCQ
Flash Memory I/O Voltage
1.7
1.95
V
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