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参数资料
| 型号： | PF38F1020WYTQ1 |
| 厂商： | INTEL CORP |
| 元件分类： | 存储器 |
| 英文描述： | SPECIALTY MEMORY CIRCUIT, PBGA88 |
| 封装： | 8 X 10 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, SCSP-88 |
| 文件页数： | 6/23页 |
| 文件大小： | 364K |
| 代理商： | PF38F1020WYTQ1 |
32-Mbit W18 + 8-Mbit SRAM (38F1020W0YTQ1, 38F1020W0YBQ1)
28 Jun 2005
Intel StrataFlash Wireless Memory (W18 SCSP)
Datasheet
14
Order Number: 252635, Revision: 003
7.0
AC Characteristics
7.1
Flash Memory Device AC Characteristics
Refer to the Intel
Wireless Flash Memory (W18) Datasheet (order number 290701) for flash
memory device AC characteristics details not included in Table 5.
7.2
SRAM AC Characteristics
Table 5.
Flash Memory Device AC Read Characteristics
Number
Sym
Parameter
W18
Unit
Min
Max
Asynchronous Specifications
R1
tAVAV
Read Cycle Time
65
ns
R2
tAVQV
Address to Output Delay
65
ns
R3
tELQV
CE# Low to Output Delay
65
ns
Latching Specifications
R108
tAPA
Page Address Access Time
25
ns
Number
Symbol
Parameter
Min
Max
Unit
Notes
R1
tRC
Read Cycle Time
70
–
ns
R2
tAA
Address to Output Delay
–
70
ns
R3
tCO1
S-CS1# to Output Delay
–
70
ns
R3
tCO2
S-CS2 to Output Delay
–
70
ns
R4
tOE
R-OE# to Output Delay
–
35
ns
R5
tBA
R-UB#, R-LB# to Output Delay
–
70
ns
R6
tLZ
S-CS1# or S-CS2 to Output in Low-Z
5
–
ns
1,2
R7
tOLZ
R-OE# to Output in Low-Z
0
–
ns
1
R8
tHZ
S-CS1# or S-CS2 to Output in High-Z
0
25
ns
1,2,3
R9
tOHZ
R-OE# to Output in High-Z
0
25
ns
1,3
R10
tOH
Output Hold (from Address, S-CS1#, S-CS2, or R-OE#
Change, whichever Occurs First)
0–
ns
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相关代理商/技术参数 |
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