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参数资料
| 型号： | PF38F1020WYTQ1 |
| 厂商： | INTEL CORP |
| 元件分类： | 存储器 |
| 英文描述： | SPECIALTY MEMORY CIRCUIT, PBGA88 |
| 封装： | 8 X 10 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, SCSP-88 |
| 文件页数： | 7/23页 |
| 文件大小： | 364K |
| 代理商： | PF38F1020WYTQ1 |
32-Mbit W18 + 8-Mbit SRAM (38F1020W0YTQ1, 38F1020W0YBQ1)
Datasheet
Intel StrataFlash Wireless Memory (W18 SCSP)
28 Jun 2005
Order Number: 252635, Revision: 003
15
R11
tBLZ
R-UB#, R-LB# to Output in Low-Z
0
–
ns
1
R12
tBHZ
R-UB#, R-LB# to Output in High-Z
0
25
ns
1
Notes:
1.
Sampled, not 100% tested.
2.
At any given temperature and voltage condition, tHZ (Max) is less than tLZ (Max) for a given device and from
device-to-device interconnection.
3.
Timings of tHZ and tOHZ are when the outputs achieve the open circuit conditions and are not referenced to output
voltage levels.
Figure 4.
SRAM Read Waveform
Number
Symbol
Parameter
Min
Max
Unit
Notes
W1
tWC
Write Cycle Time
70
–
ns
1
W2
tAS
Address Setup to R-WE# (S-CS1#) and R-UB#,R-LB# Going Low
0
–
ns
3
W3
tWP
R-WE# (S-CS1#) Pulse Width
55
–
ns
1
W4
tDW
Data to Write Time Overlap
30
–
ns
W5
tAW
Address Setup to R-WE# (S-CS1#) Going High
60
–
ns
W6
tCW
S-CS1# (R-WE#) Setup to R-WE# (S-CS1#) Going High
60
–
ns
2
W7
tDH
Data Hold from R-WE# (S-CS1#) High
0
–
ns
Number
Symbol
Parameter
Min
Max
Unit
Notes
High Z
Valid Output
Address Stable
Data Valid
Device
Address Selection
Standby
V
IH
V
IL
V
IH
V
IL
S-CS1#
V
IH
V
IL
V
OH
V
OL
V
IH
R-OE#
R-WE#
DATA
R-UB#, R- LB#
High Z
V
IH
V
IL
R1
R2
R4
R3
R6
R7
R8
R9
R10
S-CS2
V
IH
V
IL
V
IH
R5
R11
R12
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相关代理商/技术参数 |
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|---|---|
| PF38F1030W0YBQFA | 制造商:Micron Technology Inc 功能描述:32X/16PS SCSP 1.8 LF WINBOND - Trays |
| PF38F1030W0YBQFB | 制造商:Micron Technology Inc 功能描述:32X/16PS SCSP 1.8 LF WINBOND - Tape and Reel |
| PF38F1030W0YCQEA | 制造商:Micron Technology Inc 功能描述:32X/16PS SCSP 1.8 LF - Trays |
| PF38F1030W0YTQFA | 制造商:Micron Technology Inc 功能描述:32X/16PS SCSP 1.8 LF WINBOND - Trays |
| PF38F1030W0YTQFB | 制造商:Micron Technology Inc 功能描述:32X/16PS SCSP 1.8 LF WINBOND - Tape and Reel |
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