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参数资料
| 型号： | PF38F1020WYTQ1 |
| 厂商： | INTEL CORP |
| 元件分类： | 存储器 |
| 英文描述： | SPECIALTY MEMORY CIRCUIT, PBGA88 |
| 封装： | 8 X 10 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, SCSP-88 |
| 文件页数： | 5/23页 |
| 文件大小： | 364K |
| 代理商： | PF38F1020WYTQ1 |
32-Mbit W18 + 8-Mbit SRAM (38F1020W0YTQ1, 38F1020W0YBQ1)
Datasheet
Intel StrataFlash Wireless Memory (W18 SCSP)
28 Jun 2005
Order Number: 252635, Revision: 003
13
6.0
Electrical Specifications
6.1
DC Characteristics
Refer to the discrete W18 Datasheet for flash DC current parameters and DC voltage information.
Table 4.
SRAM DC Characteristics
Parameter
Description
Test Conditions
1.8 V SRAM
Unit
Min
Max
VCC
Voltage Range
1.7
1.95
V
VDR
VCC for Data Retention
1.0
–
V
ICC
Operating Current at
min cycle time
IIO= 0 mA
–
35
mA
ICC2
Operating Current at
max cycle time (1us)
IIO= 0 mA
–
6
mA
ISB
Standby Current
S-CS1#>=
S-VCC-0.2V
or S-CS2<= Vss+0.2V
Address/Data toggling at minimum
cycle time
–20
A
IDR
Current in Data
Retention mode
1.8 V SRAM:
S-VCC = 1.0 V
–10
A
VOH
Output HIGH Voltage
IOH = -100uA
S-VCC -
0.15
–V
VOL
Output LOW Voltage
IOL = 100uA,
VCCMIN
-0.1
0.2
V
VIH
Input HIGH Voltage
S-VCC -
0.4
S-VCC+
0.2
V
VIL
Input LOW Voltage
-0.2
0.4
V
IOH
Output HIGH Current
–
mA
IOL
Output LOW Current
–
mA
*IIL
Input Leakage Current
-0.2<Vin<S-VCC+0.2 V
-1
+1
A
*ILDR
Input Leakage Current
in Data Retention
Mode
-0.2<Vin<S-VCC+0.2 V
S-VCC=VDR
-1
+1
A
* Input leakage currents include Hi-Z output leakage for bidirectional buffers with tristate outputs.
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相关代理商/技术参数 |
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|---|---|
| PF38F1030W0YBQFA | 制造商:Micron Technology Inc 功能描述:32X/16PS SCSP 1.8 LF WINBOND - Trays |
| PF38F1030W0YBQFB | 制造商:Micron Technology Inc 功能描述:32X/16PS SCSP 1.8 LF WINBOND - Tape and Reel |
| PF38F1030W0YCQEA | 制造商:Micron Technology Inc 功能描述:32X/16PS SCSP 1.8 LF - Trays |
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| PF38F1030W0YTQFB | 制造商:Micron Technology Inc 功能描述:32X/16PS SCSP 1.8 LF WINBOND - Tape and Reel |
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