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| 型号： | S71GL064A04BAI0B3 |
| 厂商： | Spansion Inc. |
| 英文描述： | Stacked Multi-Chip Product (MCP) Flash Memory and RAM |
| 中文描述： | 堆叠式多芯片产品（MCP）的闪存和RAM |
| 文件页数： | 53/102页 |
| 文件大小： | 1606K |
| 代理商： | S71GL064A04BAI0B3 |
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54
S71GL032A Based MCPs
S71GL032A_00_A0 March 31, 2005
Advance
Info rmation
Notes:
1. See Table 22 for program command sequence.
2. See the section on DQ3 for information on the sector erase timer.
Figure 6. Erase Operation
Erase Suspend/Erase Resume Commands
The Erase Suspend command, B0h, allows the system to interrupt a sector erase
operation and then read data from, or program data to, any sector not selected
for erasure. This command is valid only during the sector erase operation, includ-
ing the 50 s time-out period during the sector erase command sequence. The
Erase Suspend command is ignored if written during the chip erase operation or
Embedded Program algorithm.
When the Erase Suspend command is written during the sector erase operation,
the device requires a typical of 5 s (maximum of 20 s) to suspend the erase
operation. However, when the Erase Suspend command is written during the sec-
tor erase time-out, the device immediately terminates the time-out period and
suspends the erase operation.
After the erase operation has been suspended, the device enters the erase-sus-
pend-read mode. The system can read data from or program data to any sector
not selected for erasure. (The device “erase suspends” all sectors selected for
erasure.) Reading at any address within erase-suspended sectors produces sta-
tus information on DQ7–DQ0. The system can use DQ7, or DQ6 and DQ2
together, to determine if a sector is actively erasing or is erase-suspended. Refer
to the Write Operation Status section for information on these status bits.
After an erase-suspended program operation is complete, the device returns to
the erase-suspend-read mode. The system can determine the status of the pro-
gram operation using the DQ7 or DQ6 status bits, just as in the standard word
START
Write Erase
Command Sequence
(Notes 1, 2)
Data Poll to Erasing
Bank from System
Data = FFh?
No
Yes
Erasure Completed
Embedded
Erase
algorithm
in progress
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PDF描述 |
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| S71GL064A04BAI0F3 | Stacked Multi-Chip Product (MCP) Flash Memory and RAM |
| S71GL064A04BAW0B3 | Stacked Multi-Chip Product (MCP) Flash Memory and RAM |
| S71GL064A04BAW0F3 | Stacked Multi-Chip Product (MCP) Flash Memory and RAM |
| S71GL064A04BFI0B2 | Stacked Multi-Chip Product (MCP) Flash Memory and RAM |
| S71GL064A04BFI0B3 | Stacked Multi-Chip Product (MCP) Flash Memory and RAM |
相关代理商/技术参数 |
参数描述 |
|---|---|
| S71GL064A04BAI0F0 | 制造商:SPANSION 制造商全称:SPANSION 功能描述:Stacked Multi-Chip Product (MCP) Flash Memory and RAM |
| S71GL064A04BAI0F2 | 制造商:SPANSION 制造商全称:SPANSION 功能描述:Stacked Multi-Chip Product (MCP) Flash Memory and RAM |
| S71GL064A04BAI0F3 | 制造商:SPANSION 制造商全称:SPANSION 功能描述:Stacked Multi-Chip Product (MCP) Flash Memory and RAM |
| S71GL064A04BAW0B0 | 制造商:SPANSION 制造商全称:SPANSION 功能描述:Stacked Multi-Chip Product (MCP) Flash Memory and RAM |
| S71GL064A04BAW0B2 | 制造商:SPANSION 制造商全称:SPANSION 功能描述:Stacked Multi-Chip Product (MCP) Flash Memory and RAM |
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