- 您现在的位置：买卖IC网 > PDF目录270896 > S75PL127JCDBFWB0 (Spansion Inc.) Power supply woltage of 2.7 to 3.1 volt PDF资料下载
参数资料
| 型号： | S75PL127JCDBFWB0 |
| 厂商： | Spansion Inc. |
| 英文描述： | Power supply woltage of 2.7 to 3.1 volt |
| 中文描述： | 功率2月7号至三月一日伏的电源woltage |
| 文件页数： | 32/183页 |
| 文件大小： | 4247K |
| 代理商： | S75PL127JCDBFWB0 |
第1页第2页第3页第4页第5页第6页第7页第8页第9页第10页第11页第12页第13页第14页第15页第16页第17页第18页第19页第20页第21页第22页第23页第24页第25页第26页第27页第28页第29页第30页第31页当前第32页第33页第34页第35页第36页第37页第38页第39页第40页第41页第42页第43页第44页第45页第46页第47页第48页第49页第50页第51页第52页第53页第54页第55页第56页第57页第58页第59页第60页第61页第62页第63页第64页第65页第66页第67页第68页第69页第70页第71页第72页第73页第74页第75页第76页第77页第78页第79页第80页第81页第82页第83页第84页第85页第86页第87页第88页第89页第90页第91页第92页第93页第94页第95页第96页第97页第98页第99页第100页第101页第102页第103页第104页第105页第106页第107页第108页第109页第110页第111页第112页第113页第114页第115页第116页第117页第118页第119页第120页第121页第122页第123页第124页第125页第126页第127页第128页第129页第130页第131页第132页第133页第134页第135页第136页第137页第138页第139页第140页第141页第142页第143页第144页第145页第146页第147页第148页第149页第150页第151页第152页第153页第154页第155页第156页第157页第158页第159页第160页第161页第162页第163页第164页第165页第166页第167页第168页第169页第170页第171页第172页第173页第174页第175页第176页第177页第178页第179页第180页第181页第182页第183页
128
S29GLxxxN MirrorBitTM Flash Family
S29GLxxxN_MCP_A1 December 15, 2004
Advance
Info rmation
address that is either in the read or erase-suspend-read mode. The autoselect
command may not be written while the device is actively programming or
erasing.
The autoselect command sequence is initiated by first writing two unlock cycles.
This is followed by a third write cycle that contains the autoselect command. The
device then enters the autoselect mode. The system may read at any address any
number of times without initiating another autoselect command sequence:
A read cycle at address XX00h returns the manufacturer code.
Three read cycles at addresses 01h, 0Eh, and 0Fh return the device code.
A read cycle to an address containing a sector address (SA), and the address
02h on A7–A0 in word mode returns 01h if the sector is protected, or 00h if
it is unprotected.
The system must write the reset command to return to the read mode (or erase-
suspend-read mode if the device was previously in Erase Suspend).
Enter Secured Silicon Sector/Exit Secured Silicon
Sector Command Sequence
The Secured Silicon Sector region provides a secured data area containing an 8-
word/16-byte random Electronic Serial Number (ESN). The system can access
the Secured Silicon Sector region by issuing the three-cycle Enter Secured Silicon
Sector command sequence. The device continues to access the Secured Silicon
Sector region until the system issues the four-cycle Exit Secured Silicon Sector
command sequence. The Exit Secured Silicon Sector command sequence returns
the device to normal operation. Table 12 shows the address and data require-
ments for both command sequences. See also “Secured Silicon Sector Flash
Memory Region” for further information. Note that the ACC function and unlock
bypass modes are not available when the Secured Silicon Sector is enabled.
Word Program Command Sequence
Programming is a four-bus-cycle operation. The program command sequence is
initiated by writing two unlock write cycles, followed by the program set-up com-
mand. The program address and data are written next, which in turn initiate the
Embedded Program algorithm. The system is not required to provide further con-
trols or timings. The device automatically provides internally generated program
pulses and verifies the programmed cell margin. Table 12 shows the address and
data requirements for the word program command sequence.
When the Embedded Program algorithm is complete, the device then returns to
the read mode and addresses are no longer latched. The system can determine
the status of the program operation by using DQ7 or DQ6. Refer to the Write Op-
eration Status section for information on these status bits.
Any commands written to the device during the Embedded Program Algorithm
are ignored. Note that the Secured Silicon Sector, autoselect, and CFI
functions are unavailable when a program operation is in progress. Note
that a hardware reset immediately terminates the program operation. The pro-
gram command sequence should be reinitiated once the device has returned to
the read mode, to ensure data integrity.
Programming is allowed in any sequence of address locations and across sector
boundaries. Programming to the same word address multiple times without in-
tervening erases (incremental bit programming) requires a modified
programming method. For such application requirements, please contact your
相关PDF资料 |
PDF描述 |
|---|---|
| S75PL127JCDBFWB2 | Power supply woltage of 2.7 to 3.1 volt |
| S75PL127JCEBFWB2 | Power supply woltage of 2.7 to 3.1 volt |
| S75PL127JCDBFWB3 | Power supply woltage of 2.7 to 3.1 volt |
| S75PL127JCEBFWB3 | Power supply woltage of 2.7 to 3.1 volt |
| S29CD016G0PFAN010 | 16 Megabit (512 K x 32-Bit) CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory |
相关代理商/技术参数 |
参数描述 |
|---|---|
| S75PL127JCDBFWB2 | 制造商:SPANSION 制造商全称:SPANSION 功能描述:Power supply woltage of 2.7 to 3.1 volt |
| S75PL127JCDBFWB3 | 制造商:SPANSION 制造商全称:SPANSION 功能描述:Power supply woltage of 2.7 to 3.1 volt |
| S75PL127JCDBFWU0 | 制造商:SPANSION 制造商全称:SPANSION 功能描述:Power supply woltage of 2.7 to 3.1 volt |
| S75PL127JCDBFWU2 | 制造商:SPANSION 制造商全称:SPANSION 功能描述:Power supply woltage of 2.7 to 3.1 volt |
| S75PL127JCDBFWU3 | 制造商:SPANSION 制造商全称:SPANSION 功能描述:Power supply woltage of 2.7 to 3.1 volt |
发布紧急采购，3分钟左右您将得到回复。