参数资料
型号: SI4136M-EVB
厂商: Silicon Laboratories Inc
文件页数: 9/34页
文件大小: 0K
描述: BOARD EVALUATION FOR SI4136
标准包装: 1
类型: 合成器
适用于相关产品: SI4136
已供物品: 板,CD
其它名称: 336-1119
Si4136/Si4126
Rev. 1.41
17
Table 6 summarizes the characteristics of the IF VCO.
Figure 14. Example of IF External Inductor
As
a
design
example,
suppose
synthesizing
frequencies in a 30 MHz band between 735 MHz and
765 MHz is desired. The center frequency should be
defined as midway between the two extremes, or
750 MHz. The PLL will be able to adjust the VCO output
frequency ±5% of the center frequency, or ±37.5 MHz of
750 MHz
(i.e.,
from
approximately
713 MHz
to
788 MHz). The IF VCO has a CNOM of 6.5 pF, and a
6.9 nH inductance (correct to two digits) in parallel with
this capacitance will yield the desired center frequency.
An external inductance of 4.8 nH should be connected
between IFLA and IFLB, as shown in Figure 14. This, in
addition to 2.1 nH of package inductance, will present
the
correct
total
inductance
to
the
VCO.
In
manufacturing, the external inductance can vary ±10%
of its nominal value and the Si4136 will correct for the
variation with the self-tuning algorithm.
For more information on designing the external trace
inductor, please refer to Application Note 31.
2.3. Self-Tuning Algorithm
The
self-tuning
algorithm
is
initiated
immediately
following power-up of a PLL or, if the PLL is already
powered, following a change in its programmed output
frequency. This algorithm attempts to tune the VCO so
that its free-running frequency is near the desired output
frequency. In so doing, the algorithm will compensate
for manufacturing tolerance errors in the value of the
external inductance connected to the IF VCO. It will also
reduce the frequency error for which the PLL must
correct to get the precise desired output frequency. The
self-tuning algorithm will leave the VCO oscillating at a
frequency in error by somewhat less than 1% of the
desired output frequency.
After self-tuning, the PLL controls the VCO oscillation
frequency. The PLL will complete frequency locking,
eliminating any remaining frequency error. Thereafter, it
will maintain frequency-lock, compensating for effects
caused by temperature and supply voltage variations.
The Si4136’s self-tuning algorithm will compensate for
component value errors at any temperature within the
specified temperature range. However, the ability of the
PLL to compensate for drift in component values that
occur
after
self-tuning
is
limited.
For
external
inductances with temperature coefficients around ±150
ppm/°C, the PLL will be able to maintain lock for
changes in temperature of approximately ±30°C.
Applications where the PLL is regularly powered-down
or the frequency is periodically reprogrammed minimize
or eliminate the potential effects of temperature drift
because the VCO is re-tuned in either case. In
applications where the ambient temperature can drift
substantially after self-tuning, it may be necessary to
monitor the lock-detect bar (LDETB) signal on the
AUXOUT pin to determine whether a PLL is about to
run out of locking capability. (See “2.9. Auxiliary Output
(AUXOUT)” for how to select LDETB.) The LDETB
signal will be low after self-tuning has completed but will
rise when either the IF or RF PLL nears the limit of its
compensation range. (LDETB will also be high when
either PLL is executing the self-tuning algorithm.) The
output frequency will still be locked when LDETB goes
high, but the PLL will eventually lose lock if the
temperature continues to drift in the same direction.
Therefore, if LDETB goes high both the IF and RF PLLs
should promptly be re-tuned by initiating the self-tuning
algorithm.
2.4. Output Frequencies
The IF and RF output frequencies are set by
programming the R- and N-Divider registers. Each PLL
has its own R and N registers so that each can be
Table 6. Si4136-BT/GT VCO Characteristics
VCO
Fcen Range
(MHz)
Cnom
(pF)
Lpkg
(nH)
Lext Range
(nH)
Min
Max
Min
Max
IF
526
952
6.5
2.1
2.2
12.0
f
CEN
1
2
L
TOT
C
NOM
---------------------------------------------
1
2
L
PKG
L
EXT
+
C
NOM
----------------------------------------------------------------------
==
Si4136
L
PKG
2
L
PKG
2
L
EXT
IFLB
IFLA
相关PDF资料
PDF描述
SI4126M-EVB BOARD EVALUATION FOR SI4126
SI4123M-EVB BOARD EVALUATION FOR SI4123
GLAA01B SWITCH TOP PLUNGER SNAP SPDT
SI4122M-EVB BOARD EVALUATION FOR SI4122
SI4113M-EVB BOARD EVALUATION FOR SI4113
相关代理商/技术参数
参数描述
SI4154DY 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 40-V (D-S) MOSFET
SI4154DY-T1-GE3 功能描述:MOSFET 40V 36A 7.8W 3.3mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI4156DY 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 30-V (D-S) MOSFET
SI4156DY-T1-GE3 功能描述:MOSFET 30V 24A 6.0W 6.0mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI4156DY-T1-GE3 制造商:Vishay Siliconix 功能描述:N CHANNEL MOSFET 30V 24A