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参数资料
| 型号： | SST38VF6401-90-4C-EKE |
| 厂商： | SILICON STORAGE TECHNOLOGY INC |
| 元件分类： | PROM |
| 英文描述： | 4M X 16 FLASH 2.7V PROM, 90 ns, PDSO48 |
| 封装： | 12 X 20 MM, ROHS COMPLIANT, MO-142DD, TSOP1-48 |
| 文件页数： | 1/55页 |
| 文件大小： | 1547K |
| 代理商： | SST38VF6401-90-4C-EKE |
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Preliminary Specification
2008 Silicon Storage Technology, Inc.
S71309-03-000
08/08
1
The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.
MPF is a trademark of Silicon Storage Technology, Inc.
These specifications are subject to change without notice.
64 Mbit (x16) Advanced Multi-Purpose Flash Plus
SST38VF6401 / SST38VF6402 / SST38VF6403 / SST38VF6404
FEATURES:
Organized as 4M x16
Single Voltage Read and Write Operations
– 2.7-3.6V
Superior Reliability
– Endurance: up to 100,000 Cycles minimum
– Greater than 100 years Data Retention
Low Power Consumption (typical values at 5 MHz)
– Active Current: 4 mA (typical)
– Standby Current: 3 A (typical)
– Auto Low Power Mode: 3 A (typical)
128-bit Unique ID
Security-ID Feature
– 256 Word, user One-Time-Programmable
Protection and Security Features
– Hardware Boot Block Protection/WP# Input Pin,
Uniform (32 KWord) and Non-Uniform (8 KWord)
options available
– User-controlled individual block (32 KWord) pro-
tection, using software only methods
– Password protection
Hardware Reset Pin (RST#)
Fast Read and Page Read Access Times:
– 90 ns Read access time
– 25 ns Page Read access times
- 4-Word Page Read buffer
Latched Address and Data
Fast Erase Times:
– Sector-Erase Time: 18 ms (typical)
– Block-Erase Time: 18 ms (typical)
– Chip-Erase Time: 40 ms (typical)
Erase-Suspend/-Resume Capabilities
Fast Word and Write-Buffer Programming
Times:
– Word-Program Time: 7 s (typical)
– Write Buffer Programming Time: 1.75 s / Word
(typical)
- 16-Word Write Buffer
Automatic Write Timing
– Internal VPP Generation
End-of-Write Detection
– Toggle Bits
– Data# Polling
– RY/BY# Output
CMOS I/O Compatibility
JEDEC Standard
– Flash EEPROM Pinouts and command sets
CFI Compliant
Packages Available
– 48-lead TSOP
– 48-ball TFBGA
All non-Pb (lead-free) devices are RoHS compliant
PRODUCT DESCRIPTION
The SST38VF6401, SST38VF6402, SST38VF6403, and
SST38VF6404 devices are 4M x16 CMOS Advanced
Multi-Purpose Flash Plus (Advanced MPF+) manufactured
with SST proprietary, high-performance CMOS Super-
Flash technology. The split-gate cell design and thick-oxide
tunneling injector attain better reliability and manufacturabil-
ity
compared
with
alternate
approaches.
The
SST38VF6401/6402/6403/6404 write (Program or Erase)
with a 2.7-3.6V power supply. These devices conform to
JEDEC standard pin assignments for x16 memories.
Featuring
high
performance
Word-Program,
the
SST38VF6401/6402/6403/6404 provide a typical Word-
Program time of 7 sec. For faster word-programming per-
formance, the Write-Buffer Programming feature, has a typ-
ical word-program time of 1.75 sec. These devices use
Toggle Bit or Data# Polling to indicate Program operation
completion. In addition to single-word Read, Advanced
MPF+ devices provide a Page-Read feature that enables a
faster word read time of 25 ns, for words on the same page.
To protect against inadvertent write, the SST38VF6401/
6402/6403/6404 have on-chip hardware and Software
Data Protection schemes. Designed, manufactured, and
tested for a wide spectrum of applications, these devices
are available with up to 100,000 cycles minimum endur-
ance. Data retention is rated at greater than 100 years.
The SST38VF6401/6402/6403/6404 are suited for applica-
tions that require the convenient and economical updating
of program, configuration, or data memory. For all system
applications, Advanced MPF+ significantly improve perfor-
mance and reliability, while lowering power consumption.
These devices inherently use less energy during Erase and
Program than alternative flash technologies. The total
energy consumed is a function of the applied voltage, cur-
rent, and time of application. For any given voltage range,
the SuperFlash technology uses less current to program
and has a shorter erase time; therefore, the total energy
consumed during any Erase or Program operation is less
than alternative flash technologies.
SST38VF640x2.7V 64Mb (x16) MPF+ memories
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SST38VF6401-90-5C-B3KE | 功能描述:闪存 64M (4Mx16) 90ns 2.7-3.6V Commercial RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| SST38VF6401-90-5C-EKE | 功能描述:闪存 64M (4Mx16) 90ns 2.7-3.6V Commercial RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| SST38VF6401-90-5C-EKE-T | 功能描述:闪存 2.7 to 3.6V 64Mbit Parallel Adv MPF+ RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| SST38VF6401-90-5I-B3KE | 功能描述:闪存 2.7 to 3.6V 64Mbit Parallel Adv MPF+ RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| SST38VF6401-90-5I-B3KE-T | 制造商:Microchip Technology 功能描述:Flash Parallel 3.3V 64Mbit 4M x 16bit 90ns 48-Pin TFBGA T/R 制造商:Microchip Technology Inc 功能描述:2.7V TO 3.6V 64MBIT PM PARALLEL ADVANCED MPF+ - Tape and Reel 制造商:Microchip Technology Inc 功能描述:IC FLASH 64MBIT 90NS 48TFBGA 制造商:Microchip Technology Inc 功能描述:2.7Vto3.6V 64Mb ParAdvanced MPF+ |
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