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| 型号： | SST38VF6401-90-4C-EKE |
| 厂商： | SILICON STORAGE TECHNOLOGY INC |
| 元件分类： | PROM |
| 英文描述： | 4M X 16 FLASH 2.7V PROM, 90 ns, PDSO48 |
| 封装： | 12 X 20 MM, ROHS COMPLIANT, MO-142DD, TSOP1-48 |
| 文件页数： | 23/55页 |
| 文件大小： | 1547K |
| 代理商： | SST38VF6401-90-4C-EKE |
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Preliminary Specification
64 Mbit (x16) Advanced Multi-Purpose Flash Plus
SST38VF6401 / SST38VF6402 / SST38VF6403 / SST38VF6404
3
2008 Silicon Storage Technology, Inc.
S71309-03-000
08/08
Write-Buffer Programming
The SST38VF6401/6402/6403/6404 offer Write-Buffer
Programming, a feature that enables faster effective word
programming. To use this feature, write up to 16 words with
the Write-to-Buffer command, then use the Program
Buffer-to-Flash command to program the Write-Buffer to
memory.
The Write-to-Buffer command consists of between 5 and
20 write cycles. The total number of write cycles in the
Write-to-Buffer command sequence is equal to the number
of words to be written to the buffer plus four.
The first three cycles in the command sequence tell the
device that a Write-to-Buffer operation will begin.
The fourth cycle tells the device the number of words to be
written into the buffer and the block address of these words.
Specifically, the write cycle consists of a block address and
a data value called the Word Count (WC), which is the
number of words to be written to the buffer minus one. If the
WC is greater than 15, the maximum buffer size minus 1,
then the operation aborts.
For the fifth cycle, and all subsequent cycles of the Write-
to-Buffer command, the command sequence consists of
the addresses and data of the words to be written into the
buffer. All of these cycles must have the same A21 - A4
address, otherwise the operation aborts. The number of
Write cycles required is equal to the number of words to be
written into the Write-Buffer, which is equal to WC plus one.
The correct number of Write cycles must be issued or the
operation will abort. Each Write cycle decrements the
Write-Buffer counter, even if two or more of the Write cycles
have identical address values. Only the final data loaded for
each buffer location is held in the Write-Buffer.
Once the Write-to-Buffer command sequence is com-
pleted, the Program Buffer-to-Flash command should be
issued to program the Write-Buffer contents to the speci-
fied block in memory. The block address (i.e. A21 - A15) in
this command must match the block address in the 4th
write cycle of the Write-to-Buffer command or the operation
aborts. See Table 11 for details on Write-to-Buffer and Pro-
gram-Buffer-to-Flash commands.
While issuing these command sequences, the Write-Buffer
Programming Abort detection bit (DQ1) indicates if the
operation has aborted. There are several cases in which
the device can abort:
In the fourth write cycle of the Write-to-Buffer com-
mand, if the WC is greater than 15, the operation
aborts.
In the fifth and all subsequent cycles of the Write-to-
Buffer command, if the address values, A21 - A4, are
not identical, the operation aborts.
If the number of write cycles between the fifth to the
last cycle of the Write-to-Buffer command is greater
than WC +1, the operation aborts.
After
completing
the
Write-to-Buffer
command
sequence, issuing any command other than the Pro-
gram Buffer-to-Flash command, aborts the operation.
Loading a block address, i.e. A21-A15, in the Program
Buffer-to-Flash command that does not match the
block address used in the Write-to-Buffer command
aborts the operation.
If the Write-to-Buffer or Program Buffer-to-Flash operation
aborts, then DQ1 = 1 and the device enters Write-Buffer-
Abort mode. To execute another operation, a Write-to-
Buffer Abort-Reset command must be issued to clear DQ1
and return the device to standard read mode.
After the Write-to-Buffer and Program Buffer-to-Flash
commands are successfully issued, the programming
operation can be monitored using Data# Polling, Toggle
Bits, and RY/BY#.
Sector/Block-Erase Operations
The Sector-Erase and Block-Erase operations allow the
system to erase the device on a sector-by-sector, or block-
by-block, basis. The SST38VF6401/6402/6403/6404 offer
both Sector-Erase and Block-Erase modes.
The Sector-Erase architecture is based on a sector size of
4 KWords. The Sector-Erase command can erase any 4
KWord sector (S0 - S1023).
The Block-Erase architecture is based on block size of 32
KWords. In SST38VF6401 and SST38VF6402 devices,
the Block-Erase command can erase any 32KWord Block
(B0-B127). For the non-uniform boot block devices,
SST38VF6403 and SST38VF6404, the Block-Erase com-
mand can erase any 32 KWord block except the block that
contains the boot area. In the boot area, Block-Erase
behaves like Sector-Erase, and only erases a 4KWord sec-
tor. For the SST38VF6403 device, a Block-Erase executed
on the Boot Block (B0), will result in the device erasing a
4KWord sector in B0 located at A21-A12. For the
SST38VF6404 device, a Block-Erase executed on the
Boot Block (B127), will result in the device erasing a
4KWord sector in B127 located at A21-A12.
The Sector-Erase operation is initiated by executing a six-
byte command sequence with Sector-Erase command
(50H) and sector address (SA) in the last bus cycle. The
Block-Erase operation is initiated by executing a six-byte
command sequence with Block-Erase command (30H)
and block address (BA) in the last bus cycle. The sector or
block address is latched on the falling edge of the sixth
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SST38VF6401-90-5C-B3KE | 功能描述:闪存 64M (4Mx16) 90ns 2.7-3.6V Commercial RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| SST38VF6401-90-5C-EKE | 功能描述:闪存 64M (4Mx16) 90ns 2.7-3.6V Commercial RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| SST38VF6401-90-5C-EKE-T | 功能描述:闪存 2.7 to 3.6V 64Mbit Parallel Adv MPF+ RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| SST38VF6401-90-5I-B3KE | 功能描述:闪存 2.7 to 3.6V 64Mbit Parallel Adv MPF+ RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| SST38VF6401-90-5I-B3KE-T | 制造商:Microchip Technology 功能描述:Flash Parallel 3.3V 64Mbit 4M x 16bit 90ns 48-Pin TFBGA T/R 制造商:Microchip Technology Inc 功能描述:2.7V TO 3.6V 64MBIT PM PARALLEL ADVANCED MPF+ - Tape and Reel 制造商:Microchip Technology Inc 功能描述:IC FLASH 64MBIT 90NS 48TFBGA 制造商:Microchip Technology Inc 功能描述:2.7Vto3.6V 64Mb ParAdvanced MPF+ |
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