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参数资料
型号： SST38VF6401-90-4C-EKE
厂商： SILICON STORAGE TECHNOLOGY INC
元件分类： PROM
英文描述： 4M X 16 FLASH 2.7V PROM, 90 ns, PDSO48
封装： 12 X 20 MM, ROHS COMPLIANT, MO-142DD, TSOP1-48
文件页数： 16/55页
文件大小： 1547K
代理商： SST38VF6401-90-4C-EKE
Preliminary Specification
64 Mbit (x16) Advanced Multi-Purpose Flash Plus
SST38VF6401 / SST38VF6402 / SST38VF6403 / SST38VF6404
23
2008 Silicon Storage Technology, Inc.
S71309-03-000
08/08
TABLE 14: System Interface Information for SST38VF6401/6402/6403/6404
Address
Data
Description
1BH
0027H
VDD Min (Program/Erase)
DQ7-DQ4: Volts, DQ3-DQ0: 100 millivolts
1CH
0036H
VDD Max (Program/Erase)
DQ7-DQ4: Volts, DQ3-DQ0: 100 millivolts
1DH
0000H
VPP min. (00H = no VPP pin)
1EH
0000H
VPP max. (00H = no VPP pin)
1FH
0003H
Typical time out for Word-Program 2N s (23 = 8 s)
20H
0003H
Typical time out for min. size buffer program 2N s (00H = not supported)
21H
0004H
Typical time out for individual Sector/Block-Erase 2N ms (24 = 16 ms)
22H
0005H
Typical time out for Chip-Erase 2N ms (25 = 32 ms)
23H
0001H
Maximum time out for Word-Program 2N times typical (21 x 23 = 16 s)
24H
0003H
Maximum time out for buffer program 2N times typical
25H
0001H
Maximum time out for individual Sector/Block-Erase 2N times typical (21 x 24 = 32 ms)
26H
0001H
Maximum time out for Chip-Erase 2N times typical (21 x 25 = 64 ms)
T14.0 1309
TABLE 15: Device Geometry Information for SST38VF6401/6402/6403/6404
Address
Data
Description
27H
0017H
Device size = 2N Bytes (17H = 23; 223 = 8 MByte)
28H
0001H
Flash Device Interface description; 0001H = x16-only asynchronous interface
29H
0000H
2AH
0005H
Maximum number of bytes in multi-byte write = 2N (00H = not supported)
2BH
0000H
2CH
0002H
Number of Erase Sector/Block sizes supported by device
2DH
00FFH
Sector Information (y + 1 = Number of sectors; z x 256B = sector size)
2EH
0003H
y = 2047 + 1 = 2048 sectors (03FFH = 1023)
2FH
0000H
30H
0001H
z = 32 x 256 Bytes = 8 KBytes/sector (0100H = 32)
31H
007FH
Block Information (y + 1 = Number of blocks; z x 256B = block size)
32H
0000H
y =127 + 1 = 128 blocks (007FH = 127)
33H
0000H
34H
0001H
z = 256 x 256 Bytes = 64 KBytes/block (0100H = 256)
T15.1 1309
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相关代理商/技术参数
参数描述
SST38VF6401-90-5C-B3KE 功能描述:闪存 64M (4Mx16) 90ns 2.7-3.6V Commercial RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel
SST38VF6401-90-5C-EKE 功能描述:闪存 64M (4Mx16) 90ns 2.7-3.6V Commercial RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel
SST38VF6401-90-5C-EKE-T 功能描述:闪存 2.7 to 3.6V 64Mbit Parallel Adv MPF+ RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel
SST38VF6401-90-5I-B3KE 功能描述:闪存 2.7 to 3.6V 64Mbit Parallel Adv MPF+ RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel
SST38VF6401-90-5I-B3KE-T 制造商:Microchip Technology 功能描述:Flash Parallel 3.3V 64Mbit 4M x 16bit 90ns 48-Pin TFBGA T/R 制造商:Microchip Technology Inc 功能描述:2.7V TO 3.6V 64MBIT PM PARALLEL ADVANCED MPF+ - Tape and Reel 制造商:Microchip Technology Inc 功能描述:IC FLASH 64MBIT 90NS 48TFBGA 制造商:Microchip Technology Inc 功能描述:2.7Vto3.6V 64Mb ParAdvanced MPF+
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