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参数资料
| 型号： | SST38VF6401-90-4C-EKE |
| 厂商： | SILICON STORAGE TECHNOLOGY INC |
| 元件分类： | PROM |
| 英文描述： | 4M X 16 FLASH 2.7V PROM, 90 ns, PDSO48 |
| 封装： | 12 X 20 MM, ROHS COMPLIANT, MO-142DD, TSOP1-48 |
| 文件页数： | 13/55页 |
| 文件大小： | 1547K |
| 代理商： | SST38VF6401-90-4C-EKE |
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20
Preliminary Specification
64 Mbit (x16) Advanced Multi-Purpose Flash Plus
SST38VF6401 / SST38VF6402 / SST38VF6403 / SST38VF6404
2008 Silicon Storage Technology, Inc.
S71309-03-000
08/08
Global Lock of NVPBs
Global Lock of
NVPBs Entry
555H
AAH
2AAH
55H
555H
50H
Set Global Lock
Bit
XXH
A0H
XXH
00H
Global Lock
Bit Status
Read3
XXXH
Data16
Global Lock of
NVPBs Exit
XXH
90H
XXH
00H
Password Commands
Password Com-
mands Mode
Entry
555H
AAH
2AAH
55H
555H
60H
Password Pro-
gram20
XXH
A0H
PWAX
PWDx
Password
Read3
PWAX
PWDX
Submit Pass-
word21
00H
25H
00H
03H
00H
PWD0
01H
PWD1
02H
PWD2
03H
PWD3
00H
29H
Password Com-
mands Mode
Exit
XXH
90H
XXH
00H
Program and Settings Register (PSR)
PSR Entry
555H
AAH
2AAH
55H
555H
40H
PSR Program
22
XXH
A0H
XXXH
Data
PSR Read3
XXH
Data
PSR Exit
XXH
90H
XXH
00H
CFI
CFI Query
Entry23
55H
98H
SST CFI Query
Entry23
555H
AAH
2AAH
55H
555H
98H
Software ID
Exit
/CFI Exit/SEC
ID Exit9
555H
AAH
2AAH
55H
555H
F0H
Software ID
Exit/CFI Exit/
SEC ID Exit9
XXH
F0H
Irreversible Block Lock
Irreversible
Block Lock24
555H
AAH
2AAH
55H
555H
87H
XXH
00H
T11.0 1309
1. Address format A10-A0 (Hex). Addresses A11- A21 can be VIL or VIH, but no other value, for the SST38VF6401/6402/6403/6404 com-
mand sequence.
2. DQ15-DQ8 can be VIL or VIH, but no other value, for command sequence
3. All read commands are in Bold Italics.
4. Total number of cycles in this command sequence depends on the number of words to be written to the buffer.
Additional words are written by repeating Write Cycle 5. Address (WAX) values for Write Cycle 6 and later must have the same A21-A4
values as WAX in Write Cycle 5.
WC = Word Count. The value of WC is the number of words to be written into the buffer, minus 1. Maximum WC value is 15 (i.e. F Hex)
5. Erase-Suspend and Erase-Resume commands are also available in Bypass Mode.
TABLE 11: Software Command Sequence (Continued) (3 of 3)
Command
Sequence
1st Bus Cycle
2nd Bus Cycle
3rd Bus Cycle
4th Bus Cycle
5th Bus Cycle
6th Bus Cycle
7th Bus Cycle
Addr1
Data2
Addr1
Data2
Addr1
Data2
Addr1
Data2
Addr1
Data2
Addr1
Data2
Addr1
Data2
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SST38VF6401-90-5C-B3KE | 功能描述:闪存 64M (4Mx16) 90ns 2.7-3.6V Commercial RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| SST38VF6401-90-5C-EKE | 功能描述:闪存 64M (4Mx16) 90ns 2.7-3.6V Commercial RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| SST38VF6401-90-5C-EKE-T | 功能描述:闪存 2.7 to 3.6V 64Mbit Parallel Adv MPF+ RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| SST38VF6401-90-5I-B3KE | 功能描述:闪存 2.7 to 3.6V 64Mbit Parallel Adv MPF+ RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| SST38VF6401-90-5I-B3KE-T | 制造商:Microchip Technology 功能描述:Flash Parallel 3.3V 64Mbit 4M x 16bit 90ns 48-Pin TFBGA T/R 制造商:Microchip Technology Inc 功能描述:2.7V TO 3.6V 64MBIT PM PARALLEL ADVANCED MPF+ - Tape and Reel 制造商:Microchip Technology Inc 功能描述:IC FLASH 64MBIT 90NS 48TFBGA 制造商:Microchip Technology Inc 功能描述:2.7Vto3.6V 64Mb ParAdvanced MPF+ |
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