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参数资料
| 型号： | ST7PLU05MAE |
| 厂商： | STMICROELECTRONICS |
| 元件分类： | 微控制器/微处理器 |
| 英文描述： | 8-BIT, MROM, 8 MHz, MICROCONTROLLER, PDSO8 |
| 封装： | 0.150 INCH, ROHS COMPLIANT, PLASTIC, SOP-8 |
| 文件页数： | 5/124页 |
| 文件大小： | 1995K |
| 代理商： | ST7PLU05MAE |
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Electrical characteristics
ST7LUS5, ST7LU05, ST7LU09
102/124
12.7.2
Electromagnetic interference (EMI)
Based on a simple application running on the product (toggling two LEDs through the I/O
ports), the product is monitored in terms of emission. This emission test is in line with the
norm SAE J 1752/3 which specifies the board and the loading of each pin.
12.7.3
Absolute maximum ratings (electrical sensitivity)
Based on three different tests (ESD, LU and DLU) using specific measurement methods, the
product is stressed in order to determine its performance in terms of electrical sensitivity.
For more details, refer to the application note AN1181.
Electrostatic discharge (ESD)
Electrostatic discharges (a positive then a negative pulse separated by 1 second) are
applied to the pins of each sample according to each pin combination. The sample size
depends on the number of supply pins in the device (3 parts*(n+1) supply pin). Three
models can be simulated: Human Body Model, Charged Device Model and Machine Model.
This test conforms to the JESD22-A114A/A115A standard.
Static and dynamic latch-up
●
LU: 3 complementary static tests are required on 10 parts to assess the latch-up
performance. A supply overvoltage (applied to each power supply pin) and a current
injection (applied to each input, output and configurable I/O pin) are performed on each
Table 76.
EMI emissions(1)
1.
Data based on characterization results, not tested in production.
Symbol
Parameter
Conditions
Monitored
frequency band
Max vs.
[fOSC/fCPU]
Unit
-/8 MHz
SEMI
Peak level
VDD =5V, TA = +25°C,
SO8 package,
conforming to SAE J 1752/3
0.1 MHz to 30 MHz
21
dBV
30 MHz to 130 MHz
23
130 MHz to 1 GHz
10
SAE EMI Level
3
-
Table 77.
Absolute maximum ratings
Symbol
Ratings
Conditions
Maximum value(1)
1.
Data based on characterization results, not tested in production.
Unit
VESD(HBM)
Electrostatic discharge voltage
(Human Body Model)
TA = +25 °C
4000
V
VESD(CDM)
Electrostatic discharge voltage
(Charged Device Model)
750
VESD(MM)
Electrostatic discharge voltage
(Machine Model)
400
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