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参数资料
| 型号： | SUD19P06-60L-E3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 2/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH D-S 60V TO252 |
| 标准包装： | 2,000 |
| 系列： | TrenchFET® |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 19A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 60 毫欧 @ 10A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 40nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1710pF @ 25V |
| 功率 - 最大： | 2.7W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | TO-252，（D-Pak） |
| 包装： | 带卷 (TR) |
New Product
SUD19P06-60L
Vishay Siliconix
SPECIFICATIONS T J = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
V (BR)DSS
V GS = 0 V, I D = - 250 μA
- 60
V
Gate Threshold Voltage
Gate-Body Leakage
V GS(th)
I GSS
V DS = V GS , I D = - 250 μA
V DS = 0 V, V GS = ± 20 V
-1
-3
± 100
V
nA
V DS = - 60 V, V GS = 0 V
-1
Zero Gate Voltage Drain Current
I DSS
V DS = - 60 V, V GS = 0 V, T J = 125 °C
- 50
μA
V DS = - 60 V, V GS = 0 V, T J = 175 ° C
- 150
On-State Drain Current a
I D(on)
V DS = - 5 V, V GS = - 10 V
V GS = - 10 V, I D = - 10 A
- 30
0.048
0.060
A
Forward Transconductance
Drain-Source On-State Resistance a
a
r DS(on)
g fs
V GS = - 10 V, I D = - 16.8 A, T J = 125 °C
V GS = - 10 V, I D = - 16.8 A, T J = 175 °C
V GS = - 4.5 V, I D = - 5 A
V DS = - 15 V, I D = - 10 A
0.061
22
0.102
0.129
0.077
Ω
S
Dynamic b
Input Capacitance
C iss
1140
1710
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time c
C oss
C rss
Q g
Q gs
Q gd
R g
t d(on)
V GS = 0 V, V DS = - 25 V, f = 1 MHz
V DS = - 30 V, V GS = - 10 V, I D = - 10 A
f = 1 MHz
130
90
26
4.5
7.0
7.0
8
40
15
pF
nC
Ω
Rise Time c
Turn-Off Delay Time
c
t r
t d(off)
V DD = - 30 V, R L = 3 Ω
I D ? - 19 A, V GEN = - 10 V, R g = 2.5 Ω
9
65
15
100
ns
Fall Time c
t f
30
45
Drain-Source Body Diode Characteristics (T C = 25
°C) b
Continuous Current
Pulsed Current
I S
I SM
- 30
- 30
A
Forward Voltage a
Reverse Recovery Time
V SD
t rr
I F = - 19 A, V GS = 0 V
I F = - 19 A, di/dt = 100 A/μs
- 1.0
41
- 1.5
61
V
ns
Notes:
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 73103
S-71660-Rev. B, 06-Aug-07
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