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参数资料
| 型号： | SUD19P06-60L-E3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 6/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH D-S 60V TO252 |
| 标准包装： | 2,000 |
| 系列： | TrenchFET® |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 19A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 60 毫欧 @ 10A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 40nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1710pF @ 25V |
| 功率 - 最大： | 2.7W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | TO-252，（D-Pak） |
| 包装： | 带卷 (TR) |
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All product specifications and data are subject to change without notice.
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Document Number: 91000
Revision: 18-Jul-08
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相关PDF资料 |
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| SUD23N06-31-T4-GE3 | MOSFET N-CH D-S 60V TO252 |
| SUD23N06-31L-E3 | MOSFET N-CH D-S 60V TO252 |
| SUD25N15-52-T4-E3 | MOSFET N-CH D-S 150V TO252 |
| SUD35N05-26L-E3 | MOSFET N-CH D-S 55V TO252 |
| SUD40N02-08-E3 | MOSFET N-CH D-S 20V TO252 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SUD20N10-66L-GE3 | 制造商:Vishay Semiconductors 功能描述:N-CH MOSFET DPAK (TO-252) 100V 66MOHM @ 10V - Tape and Reel 制造商:Vishay Intertechnologies 功能描述:N-Ch MOSFET DPak (TO-252) 100V 66mohm @ 10V |
| SUD23N06 | 制造商:SHENZHENFREESCALE 制造商全称:ShenZhen FreesCale Electronics. Co., Ltd 功能描述:N-Channel 60 V (D-S) 175 ?°C MOSFET |
| SUD23N06-31 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 60-V (D-S), MOSFET |
| SUD23N06-31_08 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 60-V (D-S), MOSFET |
| SUD23N06-31_11 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 60 V (D-S), MOSFET |
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