参数资料
型号: TC58FV321
厂商: Toshiba Corporation
英文描述: TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32-MBIT (4M X 8 BITS / 2M X 16 BITS) CMOS FLASH MEMORY
中文描述: 东芝马鞍山数字集成电路硅栅CMOS 32兆位(4米× 8位/ 2米× 16位)的CMOS闪存
文件页数: 13/48页
文件大小: 560K
代理商: TC58FV321
TC58FVT321/B321FT/XB-70,-10
2002-08-06 13/48
Hidden ROM Area
The TC58FVT321/B321 features a 64-Kbyte hidden ROM area which is separate from the memory cells. The
area consists of one block. Data Read, Write and Protect can be performed on this block. Because Protect cannot
be released, once the block is protected, data in the block cannot be overwritten.
The hidden ROM area is located in the address space indicated in the HIDDEN ROM AREA ADDRESS
TABLE. To access the Hidden ROM area, input a Hidden ROM Mode Entry command. The device now enters
Hidden ROM Mode, allowing Read, Write, Erase and Block Protect to be executed. Write and Erase operations
are the same as auto operations except that the device is in Hidden ROM Mode. However, regarding write
operation, Accelaration mode can not be performed during Hidden ROM Mode. To protect the hidden ROM area,
use the block protection function. The operation of Block Protect here is the same as a normal Block Protect
except that V
IH
rather than V
ID
is input to RESET . Once the block has been protected, protection cannot be
released, even using the temporary block unprotection function. Use Block Protect carefully. Note that in Hidden
ROM Mode, simultaneous operation cannot be performed. Therefore, do not attempt to access areas other than
the hidden ROM area.
To exit Hidden ROM Mode, use the Hidden ROM Mode Exit command. This will return the device to Read
Mode.
HIDDEN ROM AREA ADDRESS TABLE
BYTE MODE
WORD MODE
TYPE
BOOT BLOCK
ARCHITECTURE
ADDRESS RANGE
SIZE
ADDRESS RANGE
SIZE
TC58FVT321
TOP BOOT BLOCK
3F0000H~3FFFFFH
64 Kbytes
1F8000H~1FFFFFH
32 Kwords
TC58FVB321
BOTTOM BOOT BLOCK
000000H~00FFFFH
64 Kbytes
000000H~007FFFH
32 Kwords
相关PDF资料
PDF描述
TC58NS256DC TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 256-MBIT (32M ?8 BITS) CMOS NAND E2PROM (32M BYTE SmartMediaTM)
TC58V32ADC 32M Bit (4M×8Bits ) CMOS Flash Memory(4M×8位CMOS闪速存储器)
TC59RM716RB-6 128M Bits(256K x16x32Banks)DRAM(128M位(256K x16x32组)动态RAM)
TC59RM716RB-7 128M Bits(256K x16x32Banks)DRAM(128M位(256K x16x32组)动态RAM)
TC59RM716RB-8 128M Bits(256K x16x32Banks)DRAM(128M位(256K x16x32组)动态RAM)
相关代理商/技术参数
参数描述
TC58FVB004FT-10 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:4M (512K x 8) BIT CMOS FLASH MEMORY
TC58FVB004FT-12 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:4M (512K x 8) BIT CMOS FLASH MEMORY
TC58FVB004FT-85 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:4M (512K x 8) BIT CMOS FLASH MEMORY
TC58FVB160A 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
TC58FVB160AF 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:16-MBIT (2M x 8 BITS / 1M x 16 BITS) CMOS FLASH MEMORY