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| 型号： | TC58FV321 |
| 厂商： | Toshiba Corporation |
| 英文描述： | TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32-MBIT (4M X 8 BITS / 2M X 16 BITS) CMOS FLASH MEMORY |
| 中文描述： | 东芝马鞍山数字集成电路硅栅CMOS 32兆位（4米× 8位/ 2米× 16位）的CMOS闪存 |
| 文件页数： | 18/48页 |
| 文件大小： | 560K |
| 代理商： | TC58FV321 |
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TC58FVT321/B321FT/XB-70,-10
2002-08-06 18/48
DATA PROTECTION
The TC58FVT321/B321 includes a function which guards against malfunction or data corruption.
Protection against Program/Erase Caused by Low Supply Voltage
To prevent malfunction at power-on or power-down, the device will not accept commands while V
DD
is below
V
LKO
. In this state, command input is ignored.
If V
DD
drops below V
LKO
during an Auto Operation, the device will terminate Auto-Program execution. In this
case, Auto operation is not executed again when V
DD
return to recommended V
DD
voltage Therefore, command
need to be input to execute Auto operation again.
When V
DD
>
V
LKO
, make up countermeasure to be input accurately command in system side please.
Protection against Malfunction Caused by Glitches
To prevent malfunction during operation caused by noise from the system, the device will not accept pulses
shorter than 3 ns (Typ.) input on WE, CE or OE . However, if a glitch exceeding 3 ns (Typ.) occurs and the
glitch is input to the device malfunction may occur.
The device uses standard JEDEC commands. It is conceivable that, in extreme cases, system noise may be
misinterpreted as part of a command sequence input and that the device will acknowledge it. Then, even if a
proper command is input, the device may not operate. To avoid this possibility, clear the Command Register
before command input. In an environment prone to system noise, Toshiba recommend input of a software or
hardware reset before command input.
Protection against Malfunction at Power-on
To prevent damage to data caused by sudden noise at power-on, when power is turned on with WE
=
CE
=
V
IL
the device does not latch the command on the first rising edge of WE or CE . Instead, the device
automatically Resets the Command Register and enters Read Mode.
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| TC58FVB004FT-10 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:4M (512K x 8) BIT CMOS FLASH MEMORY |
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| TC58FVB004FT-85 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:4M (512K x 8) BIT CMOS FLASH MEMORY |
| TC58FVB160A | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS |
| TC58FVB160AF | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:16-MBIT (2M x 8 BITS / 1M x 16 BITS) CMOS FLASH MEMORY |
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