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参数资料
| 型号： | TC58FVT321-10 |
| 厂商： | Toshiba Corporation |
| 英文描述： | 32M Bit (4M×8Bits ) CMOS Flash Memory(4M×8位CMOS闪速存储器) |
| 中文描述： | 32兆位（4米× 8位）的CMOS闪存（4米× 8位的CMOS闪速存储器） |
| 文件页数： | 13/46页 |
| 文件大小： | 518K |
| 代理商： | TC58FVT321-10 |
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TC58FVT321/B321FT-10
2000-08-30 13/46
COMMON FLASH MEMORY INTERFACE (CFI)
The TC58FVT321/B321 conforms to the CFI specifications. To read information from the device, input the
Query command followed by the address. In Word Mode DQ8~DQ15 all output 0s. To exit this mode, input the
Reset command.
CFI CODE TABLE
ADDRESS A6~A0
DATA DQ15~DQ0
DESCRIPTION
10H
11H
12H
0051H
0052H
0059H
ASCII string
“
QRY
”
13H
14H
0002H
0000H
Primary OEM command set
2: AMD/FJ standard type
15H
16H
0040H
0000H
Address for primary extended table
17H
18H
0000H
0000H
Alternate OEM command set
0: none exists
19H
1AH
0000H
0000H
Address for alternate OEM extended table
1BH
0027H
V
DD
(min) (Write/Erase)
DQ7~DQ4: 1 V
DQ3~DQ0: 100 mV
1CH
0036H
V
DD
(max) (Write/Erase)
DQ7~DQ4: 1 V
DQ3~DQ0: 100 mV
1DH
0000H
V
PP
(min) voltage
1EH
0000H
V
PP
(max) voltage
Typical time-out per single byte/word write (2
N
μ
s)
Typical time-out for minimum size buffer write (2
N
μ
s)
Typical time-out per individual block erase (2
N
ms)
1FH
0004H
20H
0000H
21H
000AH
22H
0000H
Typical time-out for full chip erase (2
N
ms)
23H
0005H
Maximum time-out for byte/word write (2
N
times typical)
24H
0000H
Maximum time-out for buffer write (2
N
times typical)
25H
0004H
Maximum time-out per individual block erase (2
N
times typical)
26H
0000H
Maximum time-out for full chip erase (2
N
times typical)
27H
0016H
Device Size (2
N
byte)
28H
29H
0002H
0000H
Flash device interface description
2:
×
8/
×
16
2AH
2BH
0000H
0000H
Maximum number of bytes in multi-byte write (2
N
)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| TC58FVT321-70 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32-MBIT (4M X 8 BITS / 2M X 16 BITS) CMOS FLASH MEMORY |
| TC58FVT321FT-10 | 制造商:Toshiba America Electronic Components 功能描述:Flash Mem Parallel 3V/3.3V 32M-Bit 4M x 8/2M x 16 100ns 48-Pin TSOP-I |
| TC58FVT321FT-70 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32-MBIT (4M X 8 BITS / 2M X 16 BITS) CMOS FLASH MEMORY |
| TC58FVT321XB | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32-MBIT (4M X 8 BITS / 2M X 16 BITS) CMOS FLASH MEMORY |
| TC58FVT321XB-10 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32-MBIT (4M X 8 BITS / 2M X 16 BITS) CMOS FLASH MEMORY |
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