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参数资料
| 型号： | TC58FVT321-10 |
| 厂商： | Toshiba Corporation |
| 英文描述： | 32M Bit (4M×8Bits ) CMOS Flash Memory(4M×8位CMOS闪速存储器) |
| 中文描述： | 32兆位（4米× 8位）的CMOS闪存（4米× 8位的CMOS闪速存储器） |
| 文件页数： | 19/46页 |
| 文件大小： | 518K |
| 代理商： | TC58FVT321-10 |
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TC58FVT321/B321FT-10
2000-08-30 19/46
DC CHARACTERISTICS
SYMBOL
PARAMETER
CONDITION
MIN
MAX
UNIT
I
LI
Input Leakage Current
0 V
≤
V
IN
≤
V
DD
±
1
I
LIW
Input Leakage Current
(
/ACC
WP
pin)
0 V
≤
V
IN
≤
V
DD
±
10
I
LO
Output Leakage Current
0 V
≤
V
OUT
≤
V
DD
±
1
μ
A
I
OH
=
0.1 mA
V
DD
0.4
V
OH
Output High Voltage
I
OH
=
2.5 mA
0.85
×
V
DD
V
OL
Output Low Voltage
I
OL
=
4.0 mA
0.4
V
I
DDO1
V
DD
Average Read Current
V
IN
=
V
IH
/V
IL
, I
OUT
=
0 mA
t
CYCLE
=
t
RC
(min)
30
I
DDO2
V
DD
Average Program Current
V
IN
=
V
IH
/V
IL
, I
OUT
=
0 mA
15
I
DDO3
V
DD
Average Erase Current
V
IN
=
V
IH
/V
IL
, I
OUT
=
0 mA
15
I
DDO4
V
DD
Average
Read-While-Program Current
V
IN
=
V
IH
/V
IL
, I
OUT
=
0 mA
t
CYCLE
=
t
RC
(min)
45
I
DDO5
V
DD
Average Read-while-Erase
Current
V
IN
=
V
IH
/V
IL
, I
OUT
=
0 mA
t
CYCLE
=
t
RC
(min)
45
I
DDO6
V
DD
Average Program-while-
Erase-Suspend Current
V
IN
=
V
IH
/V
IL
, I
OUT
=
0 mA
15
mA
I
DDS1
V
DD
Standby Current
CE
=
RESET
=
V
DD
or
RESET
=
V
SS
V
10
I
DDS2
V
DD
Standby Current
(Automatic Sleep Mode
(1)
)
V
IH
=
V
DD
V
IL
=
V
SS
10
I
ID
High-Voltage Input Current for
A9,
OE
and
RESET
11.4 V
≤
V
ID
≤
12.6 V
35
μ
A
I
ACC
High-Voltage Input Current for
/ACC
WP
8.5 V
≤
V
ACC
≤
9.5 V
20
mA
V
LKO
Low-V
DD
Lock-out Voltage
2.3
2.5
V
(1) The device enters Automatic Sleep Mode in which the address remains fixed for during 150 ns.
AC TEST CONDITIONS
PARAMETER
CONDITION
Input Pulse Level
V
DD
, 0.0 V
Input Pulse Rise and Fall Time (10%~90%)
5 ns
Timing Measurement Reference Level (input)
1.5 V, 1.5 V
Timing Measurement Reference Level (output)
1.5 V, 1.5 V
Output Load
C
L
(100 pF)
+
1 TTL Gate/C
L
(30 pF)
+
1 TTL Gate
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相关代理商/技术参数 |
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|---|---|
| TC58FVT321-70 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32-MBIT (4M X 8 BITS / 2M X 16 BITS) CMOS FLASH MEMORY |
| TC58FVT321FT-10 | 制造商:Toshiba America Electronic Components 功能描述:Flash Mem Parallel 3V/3.3V 32M-Bit 4M x 8/2M x 16 100ns 48-Pin TSOP-I |
| TC58FVT321FT-70 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32-MBIT (4M X 8 BITS / 2M X 16 BITS) CMOS FLASH MEMORY |
| TC58FVT321XB | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32-MBIT (4M X 8 BITS / 2M X 16 BITS) CMOS FLASH MEMORY |
| TC58FVT321XB-10 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32-MBIT (4M X 8 BITS / 2M X 16 BITS) CMOS FLASH MEMORY |
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